×

SYSTEM AND METHOD FOR CREATING A FOCUS-EXPOSURE MODEL OF A LITHOGRAPHY PROCESS

  • US 20070031745A1
  • Filed: 08/02/2006
  • Published: 02/08/2007
  • Est. Priority Date: 08/08/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method for creating a focus-exposure model of a lithography process, comprising:

  • selecting a model of a lithography process, the model including an optical model module, the model having a set of model parameters including focus, exposure, and a set of fitting parameters having variable values;

    defining a process window for the lithography process in a focus-exposure space;

    selecting a set of initial fitting parameter values for the model;

    selecting a plurality of sampling locations within the process window, the plurality of sampling locations including nominal condition and being a subset of all possible process conditions within the process window;

    generating simulated results of the lithography process at each of the plurality of sampling locations within the process window using the model with the set of initial fitting parameter values by simulating the lithography process with varying values of focus and exposure corresponding to the plurality of sampling locations within the process window while holding constant the initial fitting parameter values;

    comparing the simulated results with actual results of the lithography process at each of the plurality of sampling locations within the process window to produce a total difference measure between the simulated results and the actual results at all of the plurality of sampling locations;

    modifying the set of fitting parameter values and generating additional simulated results at each of the plurality of sampling locations within the process window to identify optimum fitting parameter values such that the total difference measure between the actual results and simulated results produced using the optimum fitting parameter values is minimized or is below a predetermined threshold; and

    defining the focus-exposure model as the model including the optimum fitting parameter values, the focus-exposure model being capable of simulating the lithography process at any location within the entire process window.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×