Protective layer in memory device and method therefor
First Claim
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1. A method for protecting a non-volatile memory device, the method comprising:
- forming a non-volatile memory device comprising a polycide structure formed over a non-conducting charge trapping layer; and
forming a protective layer over at least a portion of said polycide structure, said protective layer being adapted to absorb electromagnetic wave energy having a wavelength shorter than visible light
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Abstract
A method protecting a non-volatile memory device, the method including forming a non-volatile memory device including a polycide structure formed over a non-conducting charge trapping layer, and forming a protective layer over at least a portion of the polycide structure, die protective layer being adapted to absorb electromagnetic wave energy having a wavelength shorter than visible light. A device constructed in accordance with the method is also disclosed.
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34 Claims
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1. A method for protecting a non-volatile memory device, the method comprising:
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forming a non-volatile memory device comprising a polycide structure formed over a non-conducting charge trapping layer; and
forming a protective layer over at least a portion of said polycide structure, said protective layer being adapted to absorb electromagnetic wave energy having a wavelength shorter than visible light - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A non-volatile memory device comprising:
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a polycide structure formed over a nonconducting charge trapping layer; and
a protective layer formed over at least a portion of said polycide structure, said protective layer being adapted to absorb electromagnetic wave energy leaving a wavelength shorter than visible light. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification