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Structures and methods for forming shielded gate field effect transistors

  • US 20070032020A1
  • Filed: 06/29/2006
  • Published: 02/08/2007
  • Est. Priority Date: 06/29/2005
  • Status: Active Grant
First Claim
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1. A method for forming a field effect transistor comprising:

  • forming a trench in a semiconductor region;

    forming a dielectric layer lining the trench sidewalls and bottom;

    filling the trench with a conductive material;

    recessing the conductive material into the trench to thereby form a shield electrode in a bottom portion of the trench, the recessing comprising isotropic etching of the conductive material; and

    forming an inter-electrode dielectric (IED) over the recessed shield electrode.

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