Method and structure for fabricating devices using one or more films provided by a layer transfer process and etch back
First Claim
1. A method for fabricating one or more devices, the method comprising:
- providing a substrate, the substrate having a thickness of semiconductor material and a surface region, the substrate also having a cleave plane provided within the substrate and defining the thickness of semiconductor material;
joining the surface region of the substrate to a first handle substrate;
initiating a controlled cleaving action at a portion of the cleave plane to cause a detachment of the thickness of semiconductor material from the substrate, while the thickness of semiconductor material remains joined to the first handle substrate;
processing the first handle substrate with the thickness of semiconductor material using one or more processes to form at least one integrated circuit device onto a portion of the thickness of semiconductor material;
forming a planarized surface region overlying the thickness of semiconductor material;
joining the planarized surface region to a face of a second handle substrate; and
selectively removing the first handle substrate from the thickness of semiconductor material, while the face of the second handle substrate remains joined to the planarized surface region.
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Abstract
A method for fabricating one or more devices using semiconductor substrate with a cleave region. The method includes providing a substrate. In a preferred embodiment, the substrate has a thickness of semiconductor material and a surface region. In a specific embodiment, the substrate also has a cleave plane (including a plurality of particles, deposited material, or any combination of these, and the like) provided within the substrate, which defines the thickness of semiconductor material. The method includes joining the surface region of the substrate to a first handle substrate. In a preferred embodiment, the method includes initiating a controlled cleaving action at a portion of the cleave plane to detach the thickness of semiconductor material from the substrate, while the thickness of semiconductor material remains joined to the first handle substrate. The method includes processing the first handle substrate with the thickness of semiconductor material using one or more processes to form at least one integrated circuit device onto a portion of the thickness of semiconductor material. In a preferred embodiment, the processing includes high temperature semiconductor processing techniques to form conventional integrated circuits thereon. The method forms a planarized surface region overlying the thickness of semiconductor material. The method also joins the planarized surface region to a face of a second handle substrate. The method selectively removing the first handle substrate from the thickness of semiconductor material, while the face of the second handle substrate remains joined to the planarized surface region.
54 Citations
52 Claims
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1. A method for fabricating one or more devices, the method comprising:
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providing a substrate, the substrate having a thickness of semiconductor material and a surface region, the substrate also having a cleave plane provided within the substrate and defining the thickness of semiconductor material;
joining the surface region of the substrate to a first handle substrate;
initiating a controlled cleaving action at a portion of the cleave plane to cause a detachment of the thickness of semiconductor material from the substrate, while the thickness of semiconductor material remains joined to the first handle substrate;
processing the first handle substrate with the thickness of semiconductor material using one or more processes to form at least one integrated circuit device onto a portion of the thickness of semiconductor material;
forming a planarized surface region overlying the thickness of semiconductor material;
joining the planarized surface region to a face of a second handle substrate; and
selectively removing the first handle substrate from the thickness of semiconductor material, while the face of the second handle substrate remains joined to the planarized surface region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method for fabricating one or more devices using a layer transfer process, the method comprising:
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providing a semiconductor substrate, the semiconductor substrate having a thickness of semiconductor material and a surface region, the semiconductor substrate also having a cleave plane including a plurality of hydrogen species provided within the semiconductor substrate and defining the thickness of semiconductor material;
joining the surface region of the semiconductor substrate to a first handle substrate;
initiating a cleaving action at a portion of the cleave plane to cause detachment of the thickness of semiconductor material from the semiconductor substrate, while the thickness of semiconductor material remains joined to the first handle substrate;
processing the first handle substrate with the thickness of semiconductor material using one or more processes to form at least one integrated circuit device onto a portion of the thickness of semiconductor material;
forming a planarized surface region overlying the thickness of semiconductor material, the planarized surface region being capable of a bonding process;
joining the planarized surface region using at least a bonding process to a face of a second handle substrate; and
selectively removing the first handle substrate from the thickness of semiconductor material, while the face of the second handle substrate remains joined to the planarized surface region. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52)
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Specification