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Method for manufacturing semiconductor device and substrate processing apparatus

  • US 20070032045A1
  • Filed: 11/19/2004
  • Published: 02/08/2007
  • Est. Priority Date: 11/20/2003
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising the steps of:

  • loading at least one substrate into a reaction chamber;

    introducing reaction gas into the reaction chamber, and exhausting an inside of the reaction chamber, thereby processing the substrate; and

    unloading the processed substrate from the reaction chamber, wherein, in the step of loading the substrate or/and in the step of unloading the substrate, the inside of the reaction chamber is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the substrate.

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