Method for manufacturing semiconductor device and substrate processing apparatus
First Claim
1. A method of manufacturing a semiconductor device, comprising the steps of:
- loading at least one substrate into a reaction chamber;
introducing reaction gas into the reaction chamber, and exhausting an inside of the reaction chamber, thereby processing the substrate; and
unloading the processed substrate from the reaction chamber, wherein, in the step of loading the substrate or/and in the step of unloading the substrate, the inside of the reaction chamber is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the substrate.
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Abstract
At a time of a substrate loading step or/and at a time of a substrate unloading step, particles are effectively eliminated from a reaction chamber.
Provided are a step of loading at least one wafer 200 into a reaction chamber 201, a step of introducing reaction gas into the reaction chamber 201, and exhausting an inside of the reaction chamber 201, thereby processing the wafer 200, and a step of unloading the processed wafer 200 from the reaction chamber 201. In the step of loading the wafer 200 or/and in the step of unloading the wafer 200, the inside of the reaction chamber 201 is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the wafer 200.
316 Citations
20 Claims
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1. A method of manufacturing a semiconductor device, comprising the steps of:
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loading at least one substrate into a reaction chamber;
introducing reaction gas into the reaction chamber, and exhausting an inside of the reaction chamber, thereby processing the substrate; and
unloading the processed substrate from the reaction chamber, wherein, in the step of loading the substrate or/and in the step of unloading the substrate, the inside of the reaction chamber is exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the substrate. - View Dependent Claims (2)
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3. A method of manufacturing a semiconductor device, comprising the steps of:
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loading at least one substrate into a reaction chamber;
introducing reaction gas into the reaction chamber, and exhausting an inside of the reaction chamber by a first exhaust line communicating with a vacuum pump, thereby processing the substrate; and
unloading the processed substrate from the reaction chamber, wherein, in the step of loading the substrate or/and in the step of unloading the substrate, the inside of the reaction chamber is exhausted by a second exhaust line having a larger exhaust flow rate than the first exhaust line. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A substrate processing apparatus, comprising:
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a reaction chamber which performs processing for at least one substrate;
at least one gas supply line which introduces gas into the reaction chamber;
a first exhaust line which exhausts an inside of the reaction chamber by a vacuum pump;
a second exhaust line having a larger exhaust flow rate than the first exhaust line which exhausts the inside of the reaction chamber; and
a controller which makes a control to exhaust the inside of the reaction chamber by the second exhaust line at a time of loading the substrate into the reaction chamber or/and at a time of unloading the substrate from the reaction chamber. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification