Semiconductor substrate process using a low temperature deposited carbon-containing hard mask

• US 20070032054A1
• Filed: 08/08/2005
• Published: 02/08/2007
• Est. Priority Date: 08/08/2005
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Collins, Kenneth, Ramaswamy, Kartik, Hanawa, Hiroji, Nguyen, Andrew, Al-Bayati, Amir, Parihar, Vijay, Jennings, Dean, Gallo, Biagio, Ma, Kai, Mayur, Abhilash
• Granted Patent: US 7,323,401 B2
• Time in Patent Office: Days
• US Class Current: 438/513
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/268 using electromagnetic radiation, e.g. laser radiation
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: Y10S 430/151 Matting or other surface reflectivity altering material

Abstract

A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

Claims

1. A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, said method comprising:

placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern;

depositing a carbon-containing hard mask layer on said substrate by;

(a) introducing a carbon-containing process gas into the chamber,

(b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path,

(c) coupling RF plasma bias power or bias voltage to the workpiece;

photolithographically defining said predetermined pattern in said carbon-containing hard mask layer;

etching the target layer in the presence of said hard mask layer.

2. The method of claim 1 wherein said target layer is formed by depositing a gate electrode conductive layer over a thin gate oxide layer.

3. The method of claim 1 wherein said target layer is formed by depositing a conductor layer on an insulator layer.

4. The method of claim 1 wherein the step of photolithographically defining said carbon-containing hard mask layer comprises:

depositing an anti-reflective coating on said hard mask layer;

depositing a photoresist layer on said anti-reflective coating;

depositing a photomask defining said predetermined pattern on said photoresist layer;

exposing said photoresist through said photomask;

developing said photoresist and removing portions of said photoresist in accordance with said predetermined pattern;

etching said anti-reflection coating with said anti-reflective coating acting as an etch mask;

removing the photoresist and etching said carbon-containing layer with said anti-reflective coating as an etch mask.

5. The method of claim 1 wherein the step of introducing the carbon-containing process gas comprises introducing the process gas through a gas distribution plate overlying the workpiece and underlying the external portion of the reentrant path.

6. The method of claim 1 wherein said process gas comprises one of (a) a hydrocarbon, (b) a fluorocarbon.

7. The method of claim 1 further comprising setting conductivity of the carbon layer between insulative and semiconductive by at least one of:

(1) adjusting the ion bombardment energy at the wafer surface,

(2) adjusting the workpiece temperature,

(3) selecting the hydrogen-carbon gas species of the process gas in accordance with a hydrogen-carbon ratio of the gas,

(4) diluting the process gas with hydrogen,

(5) diluting the process gas with an inert gas such as helium, neon, argon or xenon,

(6) adjusting the flux of energetic ions at the wafer surface relative to the flux of carbon-containing radical species to the wafer surface,

(7) adding to the process gas a precursor additive gas of one of;

(a) a semi-conductivity-enhancing species, (b) a resistivity-enhancing species;

(8) implanting in the deposited carbon layer one of;

(a) a semiconductivity-enhancing species, (b) a resistivity-enhancing species.

8. The method of claim 1 further comprising setting the transparency or opacity of the carbon layer by at least one of:

(1) adjusting the ion bombardment energy at the wafer surface,

(2) adjusting the workpiece temperature,

(3) selecting the hydrogen-carbon gas species of the process gas in accordance with a hydrogen-carbon ratio of the gas,

(4) diluting the process gas with hydrogen,

(5) diluting the process gas with an inert gas such as helium, neon, argon or xenon,

(6) adjusting the flux of energetic ions at the wafer surface relative to the flux of carbon-containing radical species to the wafer surface,

(7) adding to the process gas a precursor additive gas of one of;

(a) an absorption-enhancing species, (b) a transparency-enhancing species;

(8) implanting in the deposited carbon layer one of;

(a) an absorption-enhancing species, (b) a transparency-enhancing species.

9. The method of claim 8 wherein the absorption-enhancing species is one of boron, nitrogen, sulfur.

10. The method of claim 8 wherein the transparency-enhancing species is fluorine.

11. The method of claim 1 further comprising enhancing the adhesion of the deposited carbon layer to the underlying workpiece by setting the bias power or bias voltage to a sufficiently high level.

12. The method of claim 1 further comprising setting stress within the deposited carbon layer to one of compressive stress and tensile stress by adjusting the bias power or bias voltage.

13. The method of claim 1 further comprising increasing compressive stress in the deposited carbon layer by increasing the bias power or bias voltage.

14. The method of claim 1 further comprising controlling the conformality of the deposited carbon layer by setting the level of said RF plasma source power.

15. The method of claim 1 further comprising enhancing optical absorption of the deposited carbon layer by heating the carbon layer following completion of its deposition.

16. The method of claim 1 further comprising including a layer-enhancing additive gas that enhances thermal properties of the deposited carbon layer.

17. The method of claim 16 wherein said layer-enhancing additive gas comprises a combination of a boron-containing gas and a nitrogen-containing gas.

18. The method of claim 17 wherein said process gas comprises a hydrocarbon gas, said boron-containing gas comprises B2H6 and said nitrogen-containing gas comprises N2.