Semiconductor substrate process using an optically writable carbon-containing mask

• US 20070032082A1
• Filed: 08/08/2005
• Published: 02/08/2007
• Est. Priority Date: 08/08/2005
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Collins, Kenneth, Ramaswamy, Kartik, Hanawa, Hiroji, Nguyen, Andrew, Al-Bayati, Amir, Parihar, Vijay, Jennings, Dean, Gallo, Biagio, Ma, Kai, Mayur, Abhilash
• Granted Patent: US 7,429,532 B2
• Time in Patent Office: Days
• US Class Current: 438/689
• CPC Class Codes: G03F 1/54 Absorbers, e.g. of opaque materials
• CPC Class Codes: G03F 1/68 Preparation processes not covered by groups G03F1/20 - G03F1/50
• CPC Class Codes: G03F 7/202 Masking pattern being obtained by thermal means, e.g. laser ablation
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

Claims

1. A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, said method comprising:

placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern;

depositing an optically writable carbon-containing mask layer on said substrate by;

(a) introducing a carbon-containing process gas into the chamber,

(b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of said reentrant path,

(c) coupling RF plasma bias power or bias voltage to the workpiece;

optically writing on said carbon-containing mask layer in accordance with said predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of said optically writable mask layer; and

exposing through said mask layer the target layer with reading light of a characteristic different from that of said writing light.

2. The method of claim 1 wherein the step of optically writing comprises scanning a laser beam on said mask layer in said predetermined pattern.

3. The method of claim 2 wherein said sufficient characteristic of said writing light is the wavelength, said wavelength being on the order of 800 microns.

4. The method of claim 1 wherein said target layer is a layer that is to be thermally annealed, and said reading light is from a heat lamp.

5. The method of claim 4 wherein said heat lamp is for rapid thermal processing.

6. The method of claim 2 wherein said target layer comprises photoresist and said reading light is of a wavelength at which photoresist is responsive, said method further comprising:

removing said carbon-containing mask layer;

developing said photoresist to form a photoresist mask layer conforming generally to said predetermined pattern; and

etching an underlying layer below said target layer.

7. The method of claim 1 wherein the step of introducing the carbon-containing process gas comprises introducing the process gas through a gas distribution plate overlying the workpiece and underlying the external portion of the reentrant path.

8. The method of claim 1 wherein said process gas comprises one of (a) a hydrocarbon, (b) a fluorocarbon.

9. The method of claim 1 further comprising setting conductivity of the carbon layer between insulative and semiconductive by at least one of:

(1) adjusting the ion bombardment energy at the wafer surface,

(2) adjusting the workpiece temperature,

(3) selecting the hydrogen-carbon gas species of the process gas in accordance with a hydrogen-carbon ratio of the gas,

(4) diluting the process gas with hydrogen,

(5) diluting the process gas with an inert gas such as helium, neon, argon or xenon,

(6) adjusting the flux of energetic ions at the wafer surface relative to the flux of carbon-containing radical species to the wafer surface,

(7) adding to the process gas a precursor additive gas of one of;

(a) a semi-conductivity-enhancing species, (b) a resistivity-enhancing species;

(8) implanting in the deposited carbon layer one of;

(a) a semiconductivity-enhancing species, (b) a resistivity-enhancing species.

10. The method of claim 1 further comprising setting the transparency or opacity of the carbon layer by at least one of:

(1) adjusting the ion bombardment energy at the wafer surface,

(2) adjusting the workpiece temperature,

(3) selecting the hydrogen-carbon gas species of the process gas in accordance with a hydrogen-carbon ratio of the gas,

(4) diluting the process gas with hydrogen,

(5) diluting the process gas with an inert gas such as helium, neon, argon or xenon,

(6) adjusting the flux of energetic ions at the wafer surface relative to the flux of carbon-containing radical species to the wafer surface,

(7) adding to the process gas a precursor additive gas of one of;

(a) an absorption-enhancing species, (b) a transparency-enhancing species;

(8) implanting in the deposited carbon layer one of;

(a) an absorption-enhancing species, (b) a transparency-enhancing species.

11. The method of claim 10 wherein the absorption-enhancing species is one of boron, nitrogen, sulfur.

12. The method of claim 10 wherein the transparency-enhancing species is fluorine.

13. The method of claim 1 further comprising enhancing the adhesion of the deposited carbon layer to the underlying workpiece by setting the bias power or bias voltage to a sufficiently high level.

14. The method of claim 1 further comprising setting stress within the deposited carbon layer to one of compressive stress and tensile stress by adjusting the bias power or bias voltage.

15. The method of claim 1 further comprising increasing compressive stress in the deposited carbon layer by increasing the bias power or bias voltage.

16. The method of claim 1 further comprising controlling the conformality of the deposited carbon layer by setting the level of said RF plasma source power.

17. The method of claim 1 further comprising enhancing optical absorption of the deposited carbon layer by heating the carbon layer following completion of its deposition.

18. The method of claim 1 further comprising including a layer-enhancing additive gas that enhances thermal properties of the deposited carbon layer.

19. The method of claim 18 wherein said layer-enhancing additive gas comprises a combination of a boron-containing gas and a nitrogen-containing gas.

20. The method of claim 19 wherein said process gas comprises a hydrocarbon gas, said boron-containing gas comprises B2H6 and said nitrogen-containing gas comprises N2.