Field effect organic transistor

• US 20070034860A1
• Filed: 07/02/2004
• Published: 02/15/2007
• Est. Priority Date: 07/14/2003
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Nakamura, Shinichi
• Granted Patent: US 7,795,611 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 10/26 Diodes comprising organic-organic junctions
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/468 characterised by the gate dielectrics
• CPC Class Codes: H10K 10/486 the channel region comprising two or more active layers, e.g. forming pn heterojunctions
• CPC Class Codes: H10K 85/113 Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/615 Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

Abstract

A field effect organic transistor includes a source electrode, a drain electrode, a gate electrode, a gate insulating layer and an organic semiconductive layer; in the field effect organic transistor, the organic semiconductive layer includes a first organic semiconductive layer forming a channel region and a second organic semiconductive layer arranged to abut the first organic semiconductive layer; the charge mobility (μ₁) in the first organic semiconductive layer is 10⁻³ cm²/Vs or more; the charge mobility (μ₂) in the second organic semiconductive layer is 10⁻⁴ cm²/Vs or less; and the ratio (μ₁/μ₂) between the two organic semiconductive layers is 10 or more.

Claims

1. A field effect organic transistor comprising a source electrode, a drain electrode, a gate electrode, a gate insulating layer and an organic semiconductive layer, the field effect organic transistor being characterized in that:

said organic semiconductive layer comprises a first organic semiconductive layer forming a channel region and a second organic semiconductive layer arranged to abut said first organic semiconductive layer;

the charge mobility (μ

₁) in said first organic semiconductive layer is 10<sup>−

3</sup> cm²/Vs or more;

the charge mobility (μ

₂) in said second organic semiconductive layer is 10<sup>−

4</sup> cm²/Vs or less; and

the ratio (μ

₁/μ

₂) between the two organic semiconductive layers is 10 or more.

2. The field effect organic transistor according to claim 1, wherein the thickness of said first organic semiconductive layer is made to be 5 nm to 100 nm.

3. The field effect organic transistor according to claim 1, wherein the thickness of said second organic semiconductive layer is made to be 100 nm to 1000 nm.

4. The field effect organic transistor according to claim 1, wherein the thickness of said channel region is made to be 50 nm or less.

5. The field effect organic transistor according to claim 1, wherein said organic semiconductive layer is constructed with a conjugated polymer compound.

6. The field effect organic transistor according to claim 5, wherein the weight average molecular weight of said conjugated polymer compound is 5,000 to 500,000.

7. The field effect organic transistor according to claim 1, wherein said gate insulating layer is constructed with an organic compound.