Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip
First Claim
1. A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer, comprising the steps of:
- providing a chip composite base having a substrate and a growth surface;
forming a mask material layer on the growth surface, with a multiplicity of windows, most of which have an average extent of less than or equal to 1 μ
m, wherein a mask material is chosen in such a way that a semiconductor material of the semiconductor layer that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface;
essentially simultaneously growing semiconductor layers on regions of the growth surface that lie within the windows; and
singulating the chip composite base with applied material to form semiconductor chips.
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Accused Products
Abstract
A method for the production of a plurality of optoelectronic semiconductor chips and The invention relates to a method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer. The method involves providing a chip composite base having a substrate and a growth surface. A mask material layer is formed on the growth surface, said mask material layer having a multiplicity of windows, most of which have an average extent of less than or equal to 1 μm. In this case, a mask material is chosen in such a way that a semiconductor material of the semiconductor layer that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface. Subsequently, semiconductor layers are deposited essentially simultaneously onto regions of the growth surface that lie within the windows. A further method step is singulation of the chip composite base with applied material to form semiconductor chips. An optoelectronic semiconductor component is produced according to the method.
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14 Claims
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1. A method for the production of a plurality of optoelectronic semiconductor chips each having a plurality of structural elements with respectively at least one semiconductor layer, comprising the steps of:
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providing a chip composite base having a substrate and a growth surface;
forming a mask material layer on the growth surface, with a multiplicity of windows, most of which have an average extent of less than or equal to 1 μ
m, wherein a mask material is chosen in such a way that a semiconductor material of the semiconductor layer that is to be grown in a later method step essentially cannot grow on said mask material or can grow in a substantially worse manner in comparison with the growth surface;
essentially simultaneously growing semiconductor layers on regions of the growth surface that lie within the windows; and
singulating the chip composite base with applied material to form semiconductor chips. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification