×

Trench junction barrier controlled Schottky

  • US 20070034901A1
  • Filed: 09/30/2006
  • Published: 02/15/2007
  • Est. Priority Date: 02/11/2005
  • Status: Active Grant
First Claim
Patent Images

1. A Schottky diode comprising:

  • at least a trenched opened in a semiconductor substrate doped with a dopant of a first conductivity type wherein a sidewall of said trench is lined with a Schottky barrier metal;

    a top doped region of a second conductivity type surrounding a top portion of said sidewalls of said trench; and

    a bottom doped region of said second conductivity type surrounding at least a bottom corner of said trench.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×