Tri-gate devices and methods of fabrication
First Claim
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1. A semiconductor device comprising:
- a carbon nanotube (CNT) body having a top surface and laterally opposite side surfaces formed on a substrate;
a gate dielectric formed on the top surface of the CNT body and on the laterally opposite side surfaces of the CNT body; and
a gate electrode formed on the gate dielectric on the top surface of the CNT body and adjacent to the gate dielectric on the laterally opposite side surfaces of the CNT body.
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Abstract
The present invention is a semiconductor device comprising a carbon nanotube body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer is formed on the top surface of the carbon nanotube body and on the laterally opposite sidewalls of the carbon nanotube body. A gate electrode is formed on the gate dielectric on the top surface of the carbon nanotube body and adjacent to the gate dielectric on the laterally opposite sidewalls of the carbon nanotube body.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a carbon nanotube (CNT) body having a top surface and laterally opposite side surfaces formed on a substrate;
a gate dielectric formed on the top surface of the CNT body and on the laterally opposite side surfaces of the CNT body; and
a gate electrode formed on the gate dielectric on the top surface of the CNT body and adjacent to the gate dielectric on the laterally opposite side surfaces of the CNT body. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a semiconductor device comprising:
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forming a CNT body having a top surface and laterally opposite side surfaces on a substrate;
forming a gate dielectric on the top surface of the CNT body and on the laterally opposite side surfaces of the CNT body; and
forming a gate electrode on the gate dielectric and adjacent to the gate dielectric on the laterally opposite side surfaces of the CNT body. - View Dependent Claims (9, 10)
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Specification