CMOS imager with selectively silicided gates
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Abstract
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.
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Citations
94 Claims
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1-86. -86. (canceled)
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87. A method of forming an imager, comprising:
forming an array of pixel cells comprising;
forming a plurality of gates;
forming a silicide on at least a portion of said plurality of gates; and
removing said silicide from at least a portion of at least one of said plurality of gates. - View Dependent Claims (88, 89, 90, 91, 92, 93)
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94. A method of forming a pixel cell, comprising:
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forming a polysilicon layer over a substrate comprising a doped region;
forming a photogate insulator over said doped region;
forming a metal layer over said photogate insulator and said polysilicon;
forming a silicide from a first portion of said metal layer over said polysilicon layer;
removing a second portion of said metal layer over said photogate insulator, wherein said removing act comprises retaining said silicide over said polysilicon layer;
forming a first gate over said doped region from said polysilicon layer; and
forming a second gate from said silicide and said polysilicon layer.
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Specification