Methods and systems for detecting defects in a reticle design pattern
First Claim
1. A computer-implemented method for detecting defects in a reticle design pattern, comprising:
- acquiring images of a field in the reticle design pattern, wherein the images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die;
detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values; and
determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.
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Accused Products
Abstract
Computer-implemented methods and systems for detecting defects in a reticle design pattern are provided. One computer-implemented method includes acquiring images of a field in the reticle design pattern. The images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process. The field includes a first die and a second die. The method also includes detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values. In addition, the method includes determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.
173 Citations
21 Claims
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1. A computer-implemented method for detecting defects in a reticle design pattern, comprising:
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acquiring images of a field in the reticle design pattern, wherein the images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die;
detecting defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values; and
determining if individual defects located in the first die have substantially the same within die position as individual defects located in the second die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A system configured to detect defects in a reticle design pattern, comprising:
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an optical subsystem configured to acquire images of a field in the reticle design pattern, wherein the images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die; and
a processor coupled to the optical subsystem, wherein the processor is configured to;
detect defects in the field based on a comparison of two or more of the images corresponding to two or more of the different values; and
determine if individual defects located in the first die have substantially the same within die position as individual defects located in the second die. - View Dependent Claims (18, 19, 20)
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21. A system configured to detect defects in a reticle design pattern, comprising:
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a simulation engine configured to generate simulated images of a field in the reticle design pattern, wherein the simulated images illustrate how the field will be printed on a wafer at different values of one or more parameters of a wafer printing process, and wherein the field comprises a first die and a second die; and
a processor coupled to the simulation engine, wherein the processor is configured to;
detect defects in the field based on a comparison of two or more of the simulated images corresponding to two or more of the different values; and
determine if individual defects located in the first die have substantially the same within die position as individual defects located in the second die.
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Specification