Composed free layer for stabilizing magnetoresistive head having low magnetostriction

• US 20070035890A1
• Filed: 04/02/2004
• Published: 02/15/2007
• Est. Priority Date: 04/02/2004
• Status: Abandoned Application

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Sbiaa, Rachid
• Application Number:
  US10/572,070
• Publication Number:
  US 20070035890A1
• Time in Patent Office: Days
• US Class Current: 360/324.110
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 2005/0029 using magnetisation components of the recording layer disposed mainly perpendicularly to the record carrier surface
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3912 Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields G11B5/3916 takes precedence
• CPC Class Codes: G11B 5/3932 Magnetic biasing films

Abstract

A magnetoresistive read head includes a spin valve having at least one free layer spaced apart from at least one pinned layer by a spacer. The free layer includes a thin CoFeOx lamination layer in the CoFe, and an optional Cu layer. The amount of oxygen is below 10% of total gas. The pinned layer is a single layer, or a synthetic multi-layered structure having a spacer between sub-layers, and may have the foregoing low-magnetostriction material. As a result, low magnetostriction is obtained to improve read quality and/or improve the pinned field of the pinned layer. Other parameters are not adversely affected.

Claims

1. A magnetic sensor for reading a recording medium and having a spin valve, comprising:

a free layer having an magnetization direction adjustable in response to an external field;

a pinned layer having a fixed magnetization;

a spacer sandwiched between said pinned layer and said free layer; and

an antiferromagnetic (AFM) layer positioned on a surface of said pinned layer opposite said spacer, that stabilizes said fixed magnetization, wherein at least one of said free layer and said pinned layer comprises a first CoFeO_x layer sandwiched between a first CoFe layer and a second CoFe layer.

2. The magnetic sensor of claim 1, wherein said X of said first CoFeOx layer is the amount of oxygen therein corresponding and is below 10% with respect to a mixture of said oxygen and argon gas used in oxidation of the first CoFeOx layer.

3. The magnetic sensor of claim 1, wherein said first CoFeO_x layer has a thickness of less than about 2 angstroms.

4. The magnetic sensor of claim 1, wherein a thickness of said first CoFe layer facing said spacer is optimized relative to a thickness of said second CoFe layer so that said magnetic sensor has a positive magnetostriction less than about 5×

10<sup>−

6</sup>, said thickness of said first CoFe layer is about 20 angstroms and said thickness of said second CoFe layer is about 9 angstroms.

5. The magnetic sensor of claim 1, further comprising:

a capping layer sandwiched between said first CoFe layer of said free layer and a top lead; and

a buffer sandwiched between said AFM layer and a bottom lead, wherein a sensing current flows between said top lead and said bottom lead.

6. The magnetic sensor of claim 5, wherein said capping layer comprises Cu.

7. The magnetic sensor of claim 1, further comprising at least one multilayer that comprises:

a second CoFeOx sublayer below said first CoFe layer; and

a third CoFe sublayer between said second CoFeOx layer and said first CoFeOx layer.

8. The magnetic sensor of claim 1, wherein a percent of oxidation of at least one of said first CoFeOx layer is less than about 10 percent.

9. The magnetic sensor of claim 1, wherein the percentage of Fe with respect to Co is one of 100, 50, 30, 20 and 10 percent in at least one of said first CoFeOx layer, said first CoFe layer and said second CoFe layer.

10. The magnetic sensor of claim 1, wherein oxygen comprises about 2 percent of the total gas pressure in said first CoFeOx layer.

11. The magnetic sensor of claim 1, further comprising a stabilizer including a side shield and a means for biasing said magnetic sensor.

12. The magnetic sensor of claim 1, wherein said pinned layer is one of synthetic and a single layer.

13. The magnetic sensor of claim 1, wherein said spin valve is one of a top type, a bottom type, and a dual type, and said pinned layer is one of (a) single-layered and (b) multi-layered with a spacer between sublayers thereof.

14. The magnetic sensor of claim 1, wherein said spacer is one of:

(a) an insulator for use in a tunnel magnetoresistive (TMR) spin valve;

(b) a conductor for use in a giant magnetoresistive (GMR) spin valve; and

(c) an insulator with a magnetic nano-sized connected between said pinned layer and said free layer for use in a ballistic magnetoresistive (BMR) spin valve.

15. The magnetic sensor of claim 1, wherein said recording medium generates said flux in a magnetic direction that is one of (a) perpendicular and (b) parallel to a plane of said recording medium.

16. The magnetic sensor of claim 1, further comprising:

at least one multi-layer structure, each layer of said multi-layer structure including a first Cu layer positioned adjacent an intermediate layer that includes CoFe.

17. The magnetic sensor of claim 16, wherein said intermediate layer comprises a third CoFe layer.

18. The magnetic sensor of claim 17, wherein X equals 1, corresponding to 2% of oxygen in total gas amount and an MR ratio of said magnetic sensor is greater than about 11% when a thickness of said first CoFe layer facing said spacer is about 9 angstroms, a thickness of said first CoFeOx layer is about 2 angstroms, a thickness of said third CoFe layer is about 9 angstroms, a thickness of said first Cu layer is about 2 angstroms, and a thickness of said second CoFe layer is about 10 angstroms.

19. The magnetic sensor of claim 16, wherein said intermediate layer comprises a second CoFeOx layer sandwiched between a third CoFe layer and a fourth CoFe layer.