EXPOSURE MASK
First Claim
1. An exposure mask wherein a phase difference Δ
- θ
of i-line (365 nm) which transmits through a transparent region and a semi-transparent region and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 1.
Δ
θ
≦
arccos (−
√
n/2)
[Formula 1]
1 Assignment
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Accused Products
Abstract
An exposure mask provided with a semi-transparent film, capable of forming a resist in which a convex portion is not formed in an end portion and the end portion has gentle shape. In an exposure mask having a first region and a second region having different phase and transmittance with respect to exposure light, the phase difference Δθ with respect to exposure light which transmits though the first region and the second region and the transmittance n of the second region with respect to exposure light are defined so as to satisfy following formula 1.
Δθ≦arccos (−√n/2) [Formula 1]Accordingly, a resist having regions with different thicknesses and having gentle shape in an edge can be formed. By performing a process such as etching with this resist, regions having different thicknesses can be formed in a self-aligned manner.
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Citations
13 Claims
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1. An exposure mask wherein a phase difference Δ
- θ
of i-line (365 nm) which transmits through a transparent region and a semi-transparent region and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 1.
Δ
θ
≦
arccos (−
√
n/2)
[Formula 1]
- θ
-
2. An exposure mask wherein a phase difference Δ
- θ
of i-line (365 nm) which transmits through a transparent region and a semi-transparent region and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 2, and the transmittance n is in the range of 0.15 to 0.8.
Δ
θ
≦
arccos (−
√
n/2)
[Formula 2]
- θ
-
3. An exposure mask comprising:
-
a light-transmitting substrate;
a semi-transparent film provided over the light-transmitting substrate; and
a light-shielding film provided over the semi-transparent film, wherein a phase difference Δ
θ
between the semi-transparent film and the light-transmitting substrate with respect to i-line (365 nm) and a transmittance n of the semi-transparent film with respect to the i-line (365 nm) satisfy Formula 3.
Δ
θ
≦
arccos (−
√
n/2)
[Formula 3] - View Dependent Claims (4, 5, 6)
-
-
7. An exposure mask comprising:
-
a light-transmitting substrate;
a semi-transparent film provided over the light-transmitting substrate; and
a light-shielding film provided over the semi-transparent film, wherein a phase difference between the semi-transparent film and the light-transmitting substrate with respect to i-line (365 nm) is in the range of −
90°
to 90°
. - View Dependent Claims (8, 9, 10)
-
-
11. A method for manufacturing a semiconductor device comprising a step of:
-
forming a resist pattern using an exposure mask wherein a phase difference Δ
θ
of i-line (365 nm) which transmits through a transparent region and a semi-transparent region and a transmittance n of the semi-transparent region with respect to the exposure light satisfy Formula 1.
Δ
θ
≦
arccos (−
√
n/2)
[Formula 1] - View Dependent Claims (12, 13)
-
Specification