Semiconductor sensor production method and semiconductor sensor

• US 20070037310A1
• Filed: 07/18/2006
• Published: 02/15/2007
• Est. Priority Date: 07/29/2005
• Status: Active Grant

• Current Assignee: Ricoh Company Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Seto, Masami
• Granted Patent: US 7,629,263 B2
• Time in Patent Office: Days
• US Class Current: 438/50
• CPC Class Codes: B81B 2201/025 Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
• CPC Class Codes: B81C 1/00182 Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/0842 the mass being of clover leaf shape
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

A semiconductor sensor production method includes the steps of (A) forming a first etching mask layer on a support part segment of a backside semiconductor layer, except on a portion of the support part segment which portion is along edges of the support part segment; (B) forming a second etching mask layer on the support part segment and a proof mass part segment of the backside semiconductor layer; (C) selectively removing segments of the back side semiconductor layer between the proof mass part segment and the support part segment by performing etching; (D) making the proof mass part segment of the back side semiconductor layer thinner than the support part segment of the back side semiconductor layer by performing etching; and (E) removing the first etching mask layer by using a wet etching method.

Claims

1. A method of producing a semiconductor sensor including a proof mass part, a support part formed around the proof mass part, and beam parts connecting the proof mass part and the support part, wherein an SOI substrate including a front side semiconductor layer, a back side semiconductor layer, and a buried oxide film formed between the front side semiconductor layer and the back side semiconductor layer is used, comprising the steps of:

(A) forming a first etching mask layer on a support part segment, which support part segment is to be formed into the support part, of the backside semiconductor layer, except on a portion of the support part segment which portion is along edges of the support part segment;

(B) forming a second etching mask layer on the support part segment of the backside semiconductor layer including where the first etching mask layer is formed in the step (A), and on a proof mass part segment, which proof mass part segment is to be formed into the proof mass part, of the back side semiconductor layer;

(C) selectively removing other segments of the back side semiconductor layer between the proof mass part segment and the support part segment by performing etching from a back side of the SOI substrate using the second etching mask layer as a mask;

(D) making the proof mass part segment of the back side semiconductor layer thinner than the support part segment of the back side semiconductor layer by removing the second etching mask layer and subsequently performing etching on the back side semiconductor layer from the back side of the SOI substrate using the first etching mask layer as a mask; and

(E) removing the first etching mask layer by using a wet etching method.

2. The method of producing a semiconductor sensor as claimed in claim 1, wherein

the first etching mask layer formed in the step (A) is made of silicon oxide;

and

the buried oxide film exposed on the back side of the SOI substrate is removed together with the first etching mask layer in step (E).

3. The method of producing a semiconductor sensor as claimed in claim 1, further comprising, after step (E), the steps of:

(F) bonding a flat glass plate to the support part segment of the back side semiconductor layer;

(G) forming a third etching mask layer on the proof mass part segment, beam part segments which beam part segments are to be formed into the beam parts, and the support part segment of the front side semiconductor layer; and

(H) forming the proof mass part, the beam parts, and the support part by performing etching from a front side of the SOI substrate using the third etching mask layer as a mask.

4. The method of producing a semiconductor sensor as claimed in claim 2, further comprising, after step (E) the steps of:

(F) bonding a flat glass plate to the support part segment of the back side semiconductor layer;

(G) forming a third etching mask layer on the proof mass part segment, beam part segments which beam part segments are to be formed into the beam parts, and the support part segment of the front side semiconductor layer; and

(H) forming the proof mass part, the beam parts, and the support part by performing etching from a front side of the SOI substrate using the third etching mask layer as a mask.

5. A semiconductor sensor, comprising:

a proof mass part;

a support part formed around the proof mass part; and

beam parts connecting the proof mass part and the support part, wherein

an SOI substrate including a front side semiconductor layer, a back side semiconductor layer, and a buried oxide film formed between the front side semiconductor layer and the back side semiconductor layer is used; and

edges of the back side semiconductor layer of the support part are beveled.