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Method for forming metal pad in semiconductor device

  • US 20070037378A1
  • Filed: 08/11/2006
  • Published: 02/15/2007
  • Est. Priority Date: 08/11/2005
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a metal pad connected to a metal line in a semiconductor device, comprising the steps of:

  • forming an interlevel dielectric (ILD) layer on a substrate;

    forming at least one metal line on the ILD layer;

    forming a metal barrier on the ILD layer and the metal line;

    reforming a surface of the metal barrier by performing a reforming process using an inert gas; and

    forming a metal pad on the metal barrier.

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