Method for forming metal pad in semiconductor device
First Claim
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1. A method for manufacturing a metal pad connected to a metal line in a semiconductor device, comprising the steps of:
- forming an interlevel dielectric (ILD) layer on a substrate;
forming at least one metal line on the ILD layer;
forming a metal barrier on the ILD layer and the metal line;
reforming a surface of the metal barrier by performing a reforming process using an inert gas; and
forming a metal pad on the metal barrier.
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Abstract
A method for manufacturing a metal pad connected to a metal line in a semiconductor device is provided. The method includes forming an interlevel dielectric (ILD) layer on a substrate; forming at least one metal line on the ILD layer; forming a metal barrier on the ILD layer and the metal line; reforming the surface of the metal barrier by performing a reforming process using an inert gas; and forming a metal pad on the metal barrier.
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7 Claims
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1. A method for manufacturing a metal pad connected to a metal line in a semiconductor device, comprising the steps of:
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forming an interlevel dielectric (ILD) layer on a substrate;
forming at least one metal line on the ILD layer;
forming a metal barrier on the ILD layer and the metal line;
reforming a surface of the metal barrier by performing a reforming process using an inert gas; and
forming a metal pad on the metal barrier. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification