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IN-SITU ATOMIC LAYER DEPOSITION

  • US 20070037412A1
  • Filed: 08/03/2006
  • Published: 02/15/2007
  • Est. Priority Date: 08/05/2005
  • Status: Abandoned Application
First Claim
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1. An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system, comprising:

  • loading a plurality of wafers into a process chamber;

    pre-treating the plurality of wafers in the process chamber with a first oxidizer selected from an oxygen-containing gas or an oxygen- and nitrogen-containing gas;

    after the pre-treating, and without removing the plurality of wafers from the process chamber, depositing HfO2 on the plurality of wafers by atomic layer deposition comprising a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor with optional purging in-between, wherein the second oxidizer is selected from an oxygen-containing gas or an oxygen- and nitrogen-containing gas, and wherein the hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH); and

    unloading the plurality of wafers from the process chamber.

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