IN-SITU ATOMIC LAYER DEPOSITION
First Claim
1. An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system, comprising:
- loading a plurality of wafers into a process chamber;
pre-treating the plurality of wafers in the process chamber with a first oxidizer selected from an oxygen-containing gas or an oxygen- and nitrogen-containing gas;
after the pre-treating, and without removing the plurality of wafers from the process chamber, depositing HfO2 on the plurality of wafers by atomic layer deposition comprising a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor with optional purging in-between, wherein the second oxidizer is selected from an oxygen-containing gas or an oxygen- and nitrogen-containing gas, and wherein the hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH); and
unloading the plurality of wafers from the process chamber.
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Abstract
An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).
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Citations
20 Claims
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1. An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system, comprising:
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loading a plurality of wafers into a process chamber;
pre-treating the plurality of wafers in the process chamber with a first oxidizer selected from an oxygen-containing gas or an oxygen- and nitrogen-containing gas;
after the pre-treating, and without removing the plurality of wafers from the process chamber, depositing HfO2 on the plurality of wafers by atomic layer deposition comprising a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor with optional purging in-between, wherein the second oxidizer is selected from an oxygen-containing gas or an oxygen- and nitrogen-containing gas, and wherein the hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH); and
unloading the plurality of wafers from the process chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system, comprising:
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loading a plurality of wafers into a process chamber;
pre-treating the plurality of wafers in the process chamber at a wafer temperature in the range of about 600-850°
C. with a first oxidizer selected from O2, O3, N2O, NO, or H2O vapor;
after the pre-treating, and without removing the plurality of wafers from the process chamber, depositing HfO2 on the plurality of wafers by atomic layer deposition comprising a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber at a wafer temperature in the range of about 175-350°
C. to a second oxidizer and a hafnium precursor with optional purging in-between, wherein the second oxidizer is selected from O2, O3, N2O, NO, or H2O vapor, and wherein the hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH);
after the depositing, and without removing the plurality of wafers from the process chamber, annealing the plurality of wafers at a temperature in the range of about 550-800°
C. to densify the HfO2, wherein the annealing is selected from one or any sequential combination of a bake with no gaseous environment, an oxidation anneal in the presence of a third oxidizer selected from O2, O3, N2O, NO, or H2O vapor;
or an anneal in the presence of a non-oxidizing gas; and
unloading the plurality of wafers from the process chamber. - View Dependent Claims (17, 18, 19, 20)
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Specification