Active cooling substrate support

• US 20070039942A1
• Filed: 08/16/2005
• Published: 02/22/2007
• Est. Priority Date: 08/16/2005
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Leung, Samuel, Cho, Su Ho, Bagley, William
• Granted Patent: US 8,709,162 B2
• Time in Patent Office: Days
• US Class Current: 219/443.100
• CPC Class Codes: C23C 16/458 characterised by the method used for supporting substrates in the reaction chamber
• CPC Class Codes: C23C 16/4582 Rigid and flat substrates, e.g. plates or discs C23C16/4581 takes precedence
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/32724 Temperature
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67103 mainly by conduction

Abstract

A substrate support assembly and method for controlling the temperature of a substrate within a process chamber with a temperature uniformity of +/−5° C. are provided. A substrate support assembly includes a thermally conductive body comprising an aluminum material, a substrate support surface on the surface of the thermally conductive body and adapted to support the large area glass substrate thereon, one or more heating elements embedded within the thermally conductive body, and one or more cooling channels embedded within the thermally conductive body and positioned around the one or more heating elements. A process chamber comprising the substrate support assembly of the invention is also provided.

Claims

1. A substrate support assembly adapted to support a large area substrate inside a process chamber, comprising:

a thermally conductive body;

a substrate support surface on the surface of the thermally conductive body and adapted to support the large area substrate thereon;

one or more heating elements embedded within the thermally conductive body; and

one or more cooling channels embedded within the thermally conductive body above the one or more heating elements.

2. The substrate support assembly of claim 1, wherein the neighboring channels of the one or more cooling channels comprises cooling fluid flowing at opposite flow directions.

3. The substrate support assembly of claim 1, wherein the one or more cooling channels comprises in-flow loops and out-flow loops.

4. The substrate support assembly of claim 3, wherein the in-flow loops are configured in spiral configuration.

5. The substrate support assembly of claim 3, wherein the out-flow loops are configured in spiral configuration.

6. The substrate support assembly of claim 1, wherein the one or more cooling channels are looped in spiral configuration.

7. The substrate support assembly of claim 1, wherein the one or more cooling channels comprises inner cooling loops and outer cooling loops.

8. The substrate support assembly of claim 1, wherein the one or more cooling channels loop around the positions of the one or more heating elements.

9. The substrate support assembly of claim 1, wherein the one or more cooling channels comprises a gaseous material flowing therein at a temperature between about 10°

C. to about 25°

C.

10. The substrate support assembly of claim 9, wherein the gaseous material is selected from the group consisting of clean dry air, compressed air, and combinations thereof.

11. The substrate support assembly of claim 9, wherein the gaseous material flows inside the one or more cooling channels at a constant flow rate.

12. The substrate support assembly of claim 1, wherein the one or more cooling channels comprises a stainless steel material.

13. The substrate support assembly of claim 1, wherein the temperature of the substrate support surface is maintained at between about 100°

C. to about 200°

C.

14. The substrate support assembly of claim 1, wherein the dimension of the substrate support surface is larger than the dimension of the large area substrate.

15. The substrate support assembly of claim 1, wherein the thermally conductive body comprises an aluminum material.

16. The substrate support assembly of claim 1, wherein the substrate support surface on the thermally conductive body is a non-electrostatic chuck surface.

17. The substrate support assembly of claim 1, wherein the substrate support surface is adapted to be rectangular in shape and to support a large area substrate having a dimension of about 370 mm ×

about 470 mm or larger.

18. A substrate support assembly adapted to support a large area glass substrate inside a process chamber, comprising:

a thermally conductive body;

a substrate support surface on the surface of the thermally conductive body and adapted to support the large area glass substrate thereon;

one or more heating elements embedded within the thermally conductive body; and

one or more cooling channels embedded within the thermally conductive body and looped around the positions of the one or more heating elements in a spiral configuration.

19. The substrate support assembly of claim 18, wherein the neighboring channels of the one or more cooling channels comprises cooling fluid flowing at opposite flow directions.

20. The substrate support assembly of claim 18, wherein the one or more cooling channels comprises a gaseous material flowing therein at a temperature between about 10°

C. to about 25°

C. and the gaseous material is selected from the group consisting of clean dry air, compressed air, and combinations thereof and flows inside the one or more cooling channels at a constant flow rate.

21. The substrate support assembly of claim 18, wherein the substrate support assembly is configured to support one or more large area rectangular substrates for fabricating devices selected from the group consisting of flat panel display (FPD), flexible display, organic light emitting diode (OLED) displays, flexible organic light emitting diode (FOLED) display, polymer light emitting diode (PLED) display, liquid crystal displays (LCD), organic thin film transistor, active matrix, passive matrix, top emission device, bottom emission device, solar cell, solar panel, and combinations thereof.

22. A method for maintaining the temperature of a large area substrate inside a process chamber, comprising;

positioning the large area substrate on a substrate support surface of a substrate support assembly of the process chamber, the substrate support assembly, comprising;

a thermally conductive body;

a substrate support surface on the surface of the thermally conductive body and adapted to support the large area substrate thereon;

one or more heating elements embedded within the thermally conductive body; and

one or more cooling channels embedded within the thermally conductive body and positioned above the one or more heating elements;

flowing a gaseous cooling material constantly inside the one or more cooling channels at a constant flow rate; and

maintaining the temperature of the large area substrate by adjusting the heating power of the one or more heating elements.

23. The method of claim 22, wherein the temperature of the large area substrate is maintained constantly by adjusting the heating power of the one or more heating elements to a set point temperature which is between about 100°

C. to about 200°

C. with temperature uniformity of about +/−

5°

C. or less at the set point temperature.

24. The method of claim 22, wherein the one or more cooling channels comprises a gaseous material flowing therein at a temperature between about 10°

C. to about 25°

C.