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Highly efficient III-nitride-based top emission type light emitting device having large area and high capacity and method of manufacturing the same

  • US 20070040162A1
  • Filed: 08/17/2006
  • Published: 02/22/2007
  • Est. Priority Date: 08/19/2005
  • Status: Active Grant
First Claim
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1. A nitride-based top emission type light emitting device comprising:

  • an n-nitride-based cladding layer;

    a p-nitride-based cladding layer;

    a nitride-based active layer interposed between the n-nitride-based cladding layer and the p-nitride-based cladding layer; and

    a multiple p-ohmic contact layer stacked on the p-nitride-based cladding layer, wherein the multiple p-ohmic contact layer includes at least one pair of ohmic modification layer-current spread layer, the ohmic modification layer is not a nitride-based epitaxial layer, but a poly-crystal nitride layer or an amorphous nitride layer having nitrogen (N) combined with at least one of aluminum (Al), indium (In) and gallium (Ga), and the ohmic modification layer has a new phase when the ohmic modification layer is subject to an annealing process such that the ohmic modification layer easily forms a p-ohmic contact through a chemical reaction with the current spread layer stacked on the ohmic modification layer.

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