Integrating three-dimensional high capacitance density structures

• US 20070040204A1
• Filed: 08/16/2006
• Published: 02/22/2007
• Est. Priority Date: 08/17/2005
• Status: Active Grant

• Current Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Original Assignee: Georgia Tech Research Corporation (University System of Georgia)
• Inventors: Ayazi, Farrokh, Tummala, Rao, Balaraman, Devarajan, Abothu, Isaac, Pulugurtha, Markondeya
• Granted Patent: US 8,174,017 B2
• Time in Patent Office: Days
• US Class Current: 257/303
• CPC Class Codes: H01G 4/1227 based on alkaline earth titanates
• CPC Class Codes: H01G 4/33 Thin- or thick-film capacitors thin- or thick-film circuits H01L27/00; capacitors without a potential-jump or surface barrier specially adapted for integrated circuits, details thereof, multistep manufacturing processes therefor H01L28/40
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material
• CPC Class Codes: H01L 28/91 made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• CPC Class Codes: H05K 1/162 incorporating printed capacitors
• CPC Class Codes: H05K 2201/0175 Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
• CPC Class Codes: H05K 2201/0355 Metal foils
• CPC Class Codes: H05K 2201/0373 Conductors having a fine structure, e.g. providing a plurality of contact points with a structured tool providing micro- or nanometer scale roughness on a metal surface H05K2203/0307
• CPC Class Codes: H05K 2203/0315 Oxidising metal
• CPC Class Codes: H05K 3/243 characterised by selective plating, e.g. for finish plating of pads selective plating for making the circuit pattern H05K3/108, H05K3/182

Abstract

Disclosed are three-dimensional dielectric structures on high surface area electrodes and fabrication methods. Exemplary structures comprise a copper foil substrate, trench electrodes or high surface area porous electrode structures formed on the substrate, a insulating thin film formed on the surface and laminating the foil on a organic substrate. A variety of materials may be used to make the films including perovksite ceramics such as barium titanate, strontium titanate, barium strontium titanate (BST), lead zirconate titanate (PZT); other intermediate dielectric constant films such as zinc oxide, aluminum nitride, silicon nitride; typical paraelectrics such as tantalum oxide, alumina, and titania. The films may be fabricated using sol-gel, hydrothermal synthesis, anodization or vapor deposition techniques.

Claims

1. Apparatus comprising:

a substrate;

nonplanar three-dimensional conducting surfaces formed on the substrate;

an insulating thin film conformally formed on the conducting surfaces by chemically reacting the surface while immersed in a solution; and

a second conducting layer conformally coated on top of the insulating thin film to form a capacitor or battery that is integrated as a part of the substrate.

2. The apparatus recited in claim 1 wherein the nonplanar surfaces are formed by electroplating conducting structures on the substrate through a patterned polymer and subsequently removing the polymer.

3. The apparatus recited in claim 1 wherein the three-dimensional conducting surfaces are formed by wet or plasma etching the conducting surface.

4. The apparatus recited in claim 1 wherein the three dimensional conducting surfaces are made of titanium, niobium, tantalum, zinc, copper, aluminum, or silicon or conducting polymers.

5. The apparatus recited in claim 1 wherein the nonplanar conducting surfaces are insulated by reacting with a heated metal ion solution to form the corresponding compound insulating film.

6. The apparatus recited in claim 1 wherein the insulating thin film is formed by a electrochemical oxidation process by anodizing the conducting surface in a solution bath.

17. The apparatus recited in claim 1 wherein the insulating thin film is formed by a electrochemical oxidation process by anodizing the conducting surface in a electrochemical solution bath.

7. Apparatus comprising:

a thin metal sheet;

nonplanar three-dimensional conducting surfaces formed on the thin metal sheet; and

an insulating thin film conformally formed on the conducting surfaces;

wherein the resulting multilayered structure is then laminated onto a substrate to form a integrated capacitor or battery structure.

8. The apparatus recited in claim 7 wherein the three-dimensional conducting surfaces are formed by electroplating metal through a patterned polymer and the polymer is later removed.

9. The apparatus recited in claim 7 wherein the three-dimensional conducting surfaces are formed by wet or plasma etching through a metal using a etch resistant mask that is subsequently removed.

10. The apparatus recited in claim 7 wherein the insulating film is formed by coating a metallorganic chemical solution that is then heat treated in a controlled oxygen, nitrogen or hydrogen environment.

11. The apparatus recited in claim 7 where the insulating thin film is formed on the conducting surface by chemical or physical vapor deposition thin insulating layers.

12. Apparatus comprising:

a substrate;

a three-dimensional conducting surface comprising a partially fused metal particle layer formed by heat treating a layer of metal paste;

an insulating thin film formed on the conducting surface; and

a conducting layer conformally coated on top of the insulating thin film to form a capacitor or battery that is integrated as a part of the substrate.

13. The apparatus recited in claim 12 wherein the substrate comprises thin copper, nickel or similar metal foil that is laminated onto another substrate.

14. The apparatus recited in claim 12 wherein the conducting surfaces are made of titanium, niobium, tantalum, zinc, copper, aluminum, silicon, nickel, or chromium or conducting polymers.

15. The apparatus recited in claim 12 wherein the insulated coating is formed by depositing a metallorganic solution coating that is then heat treated in a controlled oxygen, nitrogen or hydrogen environment.

16. The apparatus recited in claim 12 wherein the three-dimensional electrode is insulated by reacting with an metal ion solution to form the corresponding compounds.

18. The apparatus recited in claim 12 where the insulating thin film is formed on the conducting surface by heat treating the three-dimensional surface in air or nitrogen to form thin dielectric coating layers comprising metal oxides or nitrides.

19. The apparatus recited in claim 12 where the insulating thin film is formed on the conducting surface by chemical or physical vapor deposition thin insulating layers.

20. The apparatus recited in claim 12 where the insulating thin film is formed on the conducting surface by coating a polymer solution layer that is then cured to form the polymer thin film insulating layer.