×

Power semiconductor device with interconnected gate trenches

  • US 20070040215A1
  • Filed: 08/14/2006
  • Published: 02/22/2007
  • Est. Priority Date: 08/17/2005
  • Status: Active Grant
First Claim
Patent Images

1. A power semiconductor device comprising:

  • a drift region of a first conductivity;

    a base region of a second conductivity over said drift region;

    a first plurality of trenches extending through said base region to said drift region;

    a first perimeter trench disposed around and intersecting said first gate trenches;

    a gate insulation layer formed in each gate trench adjacent said base region; and

    a gate electrode residing in each first gate trench.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×