Temperature detector, temperature detecting method, and semiconductor device having the temperature detector

• US 20070041425A1
• Filed: 06/14/2006
• Published: 02/22/2007
• Est. Priority Date: 08/19/2005
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Seung-won, Kim, Eui-seung
• Application Number:
  US11/452,781
• Publication Number:
  US 20070041425A1
• Time in Patent Office: Days
• US Class Current: 374/208
• CPC Class Codes: G01K 15/00 Testing or calibrating of thermometers

Abstract

A temperature detector, a temperature detecting method, and a semiconductor device having the temperature detector, in which the temperature detector includes a voltage generator, a selection circuit, and a comparator. The voltage generator generates first and second voltages that are inversely proportional to temperature. The selection circuit outputs the first voltage during a normal operation, and the second voltage during a self-test operation, wherein the second voltage is lower than the first voltage. The comparator compares a reference voltage with one of the first and second voltages output from the selection circuit, and generates a detection signal according to the comparison result. The temperature detecting method is performed by the temperature detector. The semiconductor device includes a reset signal generator that generates a reset signal for resetting a central processing unit (CPU) in response to a detection signal output from the temperature detector.

Claims

1. A temperature detector comprising:

a voltage generator generating a first voltage and a second voltage which are inversely proportional to temperature;

a selection circuit outputting one of the first and second voltages in response to a test signal; and

a comparator comparing a reference voltage with one of the first and second voltages output from the selection circuit, and generating a detection signal according to a comparison result.

2. The temperature detector of claim 1, further comprising a test terminal receiving the test signal,

wherein the selection circuit outputs the first voltage when the test signal is at a first logic level, and outputs the second voltage when the test signal is at a second logic level.

3. The temperature detector of claim 1, wherein the voltage generator comprises:

a constant current source;

a diode; and

a plurality of resistors connected in series between the constant current source and the diode,

wherein each of the first and second voltages corresponds to voltages of corresponding resistors of the plurality of resistors.

4. The temperature detector of claim 1, wherein the second voltage is lower than the first voltage.

5. A semiconductor device comprising:

a temperature detector detecting an applied temperature and generating a detection signal;

a reset signal generator generating a reset signal in response to the detection signal; and

a central processing unit that is reset in response to the reset signal,

wherein the temperature detector comprises;

a voltage generator generating a first voltage and a second voltage which are inversely proportional to temperature;

a selection circuit outputting one of the first and second voltages in response to a test signal; and

a comparator comparing a reference voltage with one of the first and second voltages output from the selection circuit, and generating the detection signal according to the comparison result.

6. The semiconductor device of claim 5, wherein the temperature detector further comprises a test terminal receiving the test signal,

wherein the selection circuit outputs the first voltage when the test signal is at a first logic level, and outputs the second voltage when the test signal is at a second logic level.

7. The semiconductor device of claim 5, wherein the voltage generator comprises:

a diode; and

a plurality of resistors connected to the diode in series,

wherein the first and second voltages are generated based on a voltage output from the diode.

8. A method of detecting temperature, comprising:

generating a first voltage and a second voltage which are inversely proportional to temperature;

outputting the first voltage in response to a first logic level of a test signal, and the second voltage in response to a second logic level of the test signal, wherein the second voltage is lower than the first voltage; and

comparing a reference voltage with one of the first and second voltages, and generating a signal corresponding to a comparison result as a temperature detection signal.

9. The method of claim 8, wherein the first and second voltages are generated based on a voltage of a diode.