Systems and methods for detecting changes in incident optical radiation at high frequencies
First Claim
1. A system for detecting changes in incident optical radiation at high frequencies, comprising:
- a detector having one or more asymmetrically conductive active areas formed of relaxation semiconductor material;
at least two electrical contacts configured with the detector and positioned with an active area therebetween; and
electronics connected to the electrical contacts, for sensing a transient voltage across the active area, the transient voltage being indicative of the changes in incident optical radiation.
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Accused Products
Abstract
Systems and methods detect changes in incident optical radiation at high frequencies. A detector having one or more asymmetrically conductive areas, formed of relaxation semiconductor material, is configured with at least two electrical contacts, positioned on opposite sides of an active area. Asymmetrical conductivity, for example provided by use of one doped contact and one un-doped contact, creates a transient voltage across the active area, which is measured by electronics connected with the electrical contacts. The transient voltage indicates changes in incident optical radiation, which may be distributed spatially uniformly over the system.
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Citations
21 Claims
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1. A system for detecting changes in incident optical radiation at high frequencies, comprising:
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a detector having one or more asymmetrically conductive active areas formed of relaxation semiconductor material;
at least two electrical contacts configured with the detector and positioned with an active area therebetween; and
electronics connected to the electrical contacts, for sensing a transient voltage across the active area, the transient voltage being indicative of the changes in incident optical radiation. - View Dependent Claims (2)
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3. A method for detecting changes in incident optical radiation at high frequencies, comprising:
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providing a detector having;
one or more asymmetrically conductive active areas formed of relaxation semiconductor material, and at least two electrical contacts on opposite sides of an active area;
connecting electronics to the at least two electrical contacts;
exposing the detector to illumination; and
sensing a transient voltage across the active area, the transient voltage being indicative of the changes in incident optical radiation. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A system for detecting changes in a spatially uniform or non-uniform optical intensity distribution incident on the system, comprising:
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one or more volumes of photoconductive material;
at least one doped electrical contact and at least one un-doped electrical contact;
one or more conductive paths connecting the electrical contacts to the volumes of photoconductive material so as to form a series circuit, with the volumes of photoconductive material located between the electrical contacts; and
electronics for determining a transient voltage across one or more of the volumes of photoconductive materials, a change in voltage being indicative of a change in the optical intensity distribution. - View Dependent Claims (21)
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Specification