Detecting endpoint using luminescence in the fabrication of a microelectronics device

• US 20070042509A1
• Filed: 08/18/2005
• Published: 02/22/2007
• Est. Priority Date: 08/18/2005
• Status: Abandoned Application

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Chen, Jingqiu, He, Yanghua, Murphy, Neal
• Application Number:
  US11/206,391
• Publication Number:
  US 20070042509A1
• Time in Patent Office: Days
• US Class Current: 438/8
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

The present invention provides a method of detecting an endpoint of the removal of a material from a microelectronics substrate. This embodiment includes removing at least a portion of an overlying material 210 located over a luminescent layer 215 that is located over a microelectronics substrate 220 and using luminescence emission 240 to determine an endpoint of the removal of the overlying material 210.

Claims

1. A method of detecting an endpoint of the removal of a material from a microelectronics substrate, comprising:

removing at least a portion of an overlying material located over a luminescent layer that is located over a microelectronics substrate; and

using luminescence emission to determine an endpoint of the removal of the overlying material.

2. The method as recited in claim 1, wherein the luminescent layer is a dielectric material.

3. The method as recited in claim 2, wherein the dielectric material is undoped silicate glass, phosphosilicate glass, fluorosilicate glass, borophosphosilicate glass, silicon carbide, or organosilicate glass.

4. The method as recited in claim 1, wherein the overlying material comprises metal.

5. The method as recited in claim 4, wherein the metal is tungsten, aluminum, copper, tantalum, titanium, molybdenum, or combinations thereof.

6. The method as recited in claim 1, wherein using luminescence emission includes using a excitation source having a wavelength of less than or equal to about 400 nm.

7. The method as recited in claim 1, wherein removing at least a portion includes using a chemical mechanical planarization process.

8. The method as recited in claim 7 further comprising detecting a change in a motor current of a motor configured to rotate a polishing platen on which the microelectronics substrate is located or determining a change in reflective intensity by using optical reflectivity.

9. The method as recited in claim 7, wherein using luminescence emission includes projecting the luminescence emission through a window located through the polishing platen.

10. The method as recited in claim 1, wherein removing at least a portion includes using a wet etch process or a plasma etch process.

11. A method of fabricating an integrated circuit, comprising:

forming transistors over a microelectronics substrate;

depositing a luminescent layer over the transistors; and

forming interconnects in the luminescent layer to electrically connect the transistors to form an operative integrated circuit, comprising;

depositing an overlying material over the luminescent layer;

removing at least a portion of the overlying material; and

using luminescence emission to determine an endpoint of the removal of the overlying material.

12. The method as recited in claim 11, wherein the luminescent layer is a dielectric material.

13. The method as recited in claim 12, wherein the dielectric material is undoped silicate glass, phosphosilicate glass, fluorosilicate glass, borophosphosilicate glass, silicon carbide, or organosilicate glass.

14. The method as recited in claim 11, wherein the overlying material comprises metal.

15. The method as recited in claim 14, wherein the metal is tungsten, aluminum, copper, tantalum, titanium, molybdenum, or combinations thereof.

16. The method as recited in claim 11, wherein using luminescence excitation includes using an excitation source having a wavelength of less than or equal to about 400 nm.

17. The method as recited in claim 11, wherein removing at least a portion includes using a chemical mechanical planarization process.

18. The method as recited in claim 17 further comprising detecting a change in a motor current of a motor configured to rotate a polishing platen on which the microelectronics substrate is located or determining a change in reflective intensity by using optical reflectivity.

19. The method as recited in claim 17, wherein using luminescence emission includes projecting the luminescence emission through a plurality of windows located through the polishing platen.

20. The method as recited in claim 11, wherein removing at least a portion includes using a wet etch process or a plasma etch process.