Packaging of electronic chips with air-bridge structures
First Claim
1. A method of forming an air bridge structure comprising:
- forming a material layer on an electronic chip;
embedding a conductive support structure and at least one conductive structure in the material layer, the at least one conducive structure including a horizontal interconnect path coupled to at least two vertical wirings coupled to the electronic chip; and
removing the material layer.
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Accused Products
Abstract
A circuit assembly for fabricating an air bridge structure and a method of fabricating an integrated circuit package capable of supporting a circuit assembly including an air bridge structure. A circuit assembly comprises an electronic chip and a conductive structure embedded in a plurality of materials having a plurality of vaporization temperatures. The plurality of materials is formed on the electronic chip and the conductive structure is coupled to the electronic chip. To fabricate the circuit assembly, a support structure, including interstices, is formed on an electronic chip. The interstices of the support structure are filled with a material having a vaporization temperature that is less than the vaporization temperature of the support structure. Conductive structures are embedded in the support structure and the material, and a connective structure is mounted on the support structure. Finally, the material is removed from the interstices by heating the circuit assembly.
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Citations
26 Claims
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1. A method of forming an air bridge structure comprising:
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forming a material layer on an electronic chip;
embedding a conductive support structure and at least one conductive structure in the material layer, the at least one conducive structure including a horizontal interconnect path coupled to at least two vertical wirings coupled to the electronic chip; and
removing the material layer. - View Dependent Claims (2, 3, 4)
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5. A method of forming an air bridge structure comprising:
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forming a material layer on an electronic chip;
embedding a conductive support structure and at least one conductive structure in the material layer, the at least one conducive structure including a horizontal interconnect path coupled to at least two vertical wirings coupled to the electronic chip mounting a connective structure on the conductive support structure; and
removing the layer material. - View Dependent Claims (6)
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7. A method of packaging an integrated circuit comprising:
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fabricating an integrated circuit structure including a conductive structure and a post support structure embedded in a fill material including a polymer;
mounting C4 pads on the integrated circuit structure;
mounting the integrated circuit structure on a substrate;
removing the fill material; and
backfilling with a gas and hermetically sealing the substrate. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of constructing an integrated circuit comprising:
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fabricating a plurality of electronic devices on a substrate;
embedding a wiring structure in a plurality of materials having a plurality of vaporization temperatures, the plurality of materials including a fill material including a polymer, the plurality of materials is located on the substrate and the wiring structure interconnects the plurality of electronic devices;
mounting the integrated circuit on a packaging substrate; and
removing at least one of the plurality of materials after the integrated circuit is mounted on the packaging substrate. - View Dependent Claims (19, 20, 21)
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22. A method comprising:
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fabricating a layer of material including a polymer above an electronic chip;
patterning and etching the layer of material to form a template for at least one level including a horizontal interconnect path coupling two or more of a plurality of vertical wiring vias coupled to the electronic chip and at least one support post;
filling the template with a conductive material to form at least one horizontal interconnect path, wherein the at least one horizontal interconnect path is coupled to two of more of the plurality of vertical wiring vias and is supported by the at least one support post;
planarizing the conductive material back to a surface of the layer of material;
fabricating an insulative layer above layer of material;
patterning and etching the insulative layer to form via sites;
filling the via sites with the conductive material to form C4 contacts;
etching an opening in the insulative layer to the layer of material;
reflowing the C4 contacts in a hydrogen atmosphere;
joining the C4 contacts to a substrate in the hydrogen atmosphere; and
removing the layer of material using an oxygen plasma. - View Dependent Claims (23, 24, 25, 26)
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Specification