Copolymers, polymer resin composition for buffer layer method of forming a pattern using the same and method of manufacturing a capacitor using the same
First Claim
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1. A copolymer comprising:
- from 61 to 75 weight percent benzyl methacrylate;
from 8 to 15 weight percent alkyl acrylic acid; and
a balance being hydroxy alkyl methacrylate.
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Abstract
The invention is directed to particular polymer compositions that may be generally characterized by the formula:
wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0<L≦0.8; 0<M≦0.25; 0<N≦0.35; and L+M+N=1; and, wherein R1, R2 and R3 are independently selected from C1-C6 alkyls and derivatives thereof. The invention is also directed to polymer compositions that, when used to form a buffer layer or pattern, can be more easily removed from the surface of a semiconductor substrate, thereby increasing productivity and/or reducing the likelihood of defects and failures associated with residual photoresist material.
20 Citations
40 Claims
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1. A copolymer comprising:
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from 61 to 75 weight percent benzyl methacrylate;
from 8 to 15 weight percent alkyl acrylic acid; and
a balance being hydroxy alkyl methacrylate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A node separation polymer composition comprising:
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a copolymer including;
from 61 to 75 weight percent benzyl methacrylate;
from 8 to 15 weight percent alkyl acrylic acid; and
a balance being hydroxy alkyl methacrylate;
a cross-linking agent;
a thermal acid generator;
a surfactant; and
a solvent. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of protecting a recessed region comprising:
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forming an insulating layer on a semiconductor substrate;
forming an opening in the insulating layer;
forming a protected layer on an upper surface of the insulating layer and a lower surface and sidewalls of the opening;
forming a buffer layer on the protected layer, the buffer layer filling the recess and including a major portion of a copolymer having from 61 to 75 weight percent benzyl methacrylate;
from 8 to 15 weight percent alkyl acrylic acid;
with a balance being hydroxy alkyl methacrylate;
removing an unexposed upper portion of the buffer layer using a developer solution to expose an upper portion of the protected layer, a remaining portion of the buffer layer substantially filling the recess; and
removing the upper portion of the protected layer while a lower portion of the protect layer is protected by the remaining portion of the buffer layer. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method of forming a capacitor comprising:
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forming an insulating layer on a semiconductor substrate;
forming an opening in the insulating layer;
forming a conductive layer on an upper surface of the insulating layer and a lower surface and sidewalls of the opening;
forming a buffer layer on the conductive layer, the buffer layer filling the recess and including a major portion of a copolymer having from 61 to 75 weight percent benzyl methacrylate;
from 8 to 15 weight percent alkyl acrylic acid; and
with a balance being hydroxy alkyl methacrylate;
removing an unexposed upper portion of the buffer layer using a developer solution to expose an upper portion of the conductive layer, a remaining portion of the buffer layer substantially filling the recess;
removing the upper portion of the conductive layer to separate lower electrode structures;
removing the remaining portion of the buffer layer;
forming a dielectric layer on the lower electrode structures; and
forming an upper electrode on the dielectric layer. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
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37. A method of forming a semiconductor device comprising:
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forming an electric element on a semiconductor substrate;
forming an insulating layer on the electric element;
forming an opening in the insulating layer to expose a contact region on the electric element;
forming a conductive layer on an upper surface of the insulating layer and a lower surface and sidewalls of the opening;
forming a buffer layer on the conductive layer, the buffer layer filling the recess and including a major portion of a copolymer having from 61 to 75 weight percent benzyl methacrylate;
from 8 to 15 weight percent alkyl acrylic acid; and
with a balance being hydroxy alkyl methacrylate;
removing an unexposed upper portion of the buffer layer using a developer solution to expose an upper portion of the conductive layer, a remaining portion of the buffer layer substantially filling the recess;
removing the upper portion of the conductive layer to separate lower electrode structures;
removing the remaining portion of the buffer layer and the insulating layer;
forming a dielectric layer on the lower electrode structures; and
forming an upper electrode on the dielectric layer. - View Dependent Claims (38, 39, 40)
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Specification
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electronics Co. Ltd.
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InventorsLee, Jung-Hoon, Kim, Young-Ho, Kim, Tae-Sung, Ahn, Sun-Yul, Kang, Kyong-Rim
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current438/689
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CPC Class CodesC08F 220/06 Acrylic acid; Methacrylic a...C08F 220/1806 C6-(meth)acrylate, e.g. (cy...C08F 220/26 Esters containing oxygen in...H01L 21/32139 using masksH01L 28/91 made by depositing layers, ...
