PARTICLE DETECTION SENSOR, METHOD FOR MANUFACTURING PARTICLE DETECTION SENSOR, AND METHOD FOR DETECTING PARTICLE USING PARTICLE DETECTION SENSOR

• US 20070044579A1
• Filed: 08/25/2006
• Published: 03/01/2007
• Est. Priority Date: 08/26/2005
• Status: Active Grant

• Current Assignee: Panduit Corporation, Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: TATEISHI, Fuminori, IZUMI, Konami, YAMAGUCHI, Mayumi
• Granted Patent: US 7,610,794 B2
• Time in Patent Office: Days
• US Class Current: 73/865.500
• CPC Class Codes: G01N 15/1023 Microstructural devices for non-optical measurement
• CPC Class Codes: G01N 15/1031 by measuring electrical or magnetic effects
• CPC Class Codes: G01N 15/1056 Microstructural devices for other than electro-optical measurement for electro-optical measurement G01N15/1484

Abstract

Since a conventional pollen sensor performs detection in an optical manner, there has been a problem that long time is required for the measurement. Further, it has also been a problem that a light source or a detector is required to be used, and the device has become larger. Correspondingly, it is an object to provide a compact sensor with which particles floating in the air can be easily detected. A sensor having a microstructure which detects a detection object by contact is used. A microstructure has an opening to be a detection hole corresponding to the size of a detection object, and a pair of electrodes having a bridge structure are provided thereabove or thereunder so as to partially contact with each other.

Claims

1. A particle detection sensor comprising:

a detector for detecting a detection object by determining whether a pair of electrodes are in contact or out of contact;

wherein the detector comprises a base having an opening;

wherein the base with the opening are over the pair of electrodes; and

wherein one of the pair of electrodes overlaps with the other of the pair of electrodes under the opening.

5. A particle detection sensor according to claim 1,

wherein the particle detection sensor further comprises an intake unit for reducing pressure in the opening, which is connected to the opening.

9. A particle detection sensor according to claim 1,

wherein the particle detection sensor further comprises a communication device.

13. A particle detection sensor according to claim 1,

wherein the opening is one of openings are arranged in matrix.

17. A particle detection sensor according to claim 1,

wherein the pair of electrodes have a bridge structure.

2. A particle detection sensor comprising:

a detecting element comprising a pair of electrodes and a base having an opening over the pair of electrodes; and

a circuit for determining whether the pair of electrodes are in contact or out of contact,

wherein one of the pair of electrodes overlaps with the other of the pair of electrodes under the opening.

6. A particle detection sensor according to claim 2,

wherein the particle detection sensor further comprises an intake unit for reducing pressure in the opening, which is connected to the opening.

10. A particle detection sensor according to claim 2,

wherein the particle detection sensor further comprises a communication device.

14. A particle detection sensor according to claim 2,

wherein the opening is one of openings are arranged in matrix.

18. A particle detection sensor according to claim 2,

wherein the pair of electrodes have a bridge structure.

3. A particle detection sensor comprising:

a detector for detecting a detection object by determining whether the pair of electrodes are in contact or out of contact;

wherein the detector comprises;

an insulating layer;

a pair of electrodes over the insulating layer; and

a base having an opening over the pair of electrodes,

wherein one of the pair of electrodes overlaps with the other of the pair of electrodes under the opening.

7. A particle detection sensor according to claim 3,

wherein the particle detection sensor further comprises an intake unit for reducing pressure in the opening, which is connected to the opening.

11. A particle detection sensor according to claim 3,

wherein the particle detection sensor further comprises a communication device.

15. A particle detection sensor according to claim 3,

wherein the opening is one of openings are arranged in matrix.

19. A particle detection sensor according to claim 3,

wherein the pair of electrodes have a bridge structure.

4. A particle detection sensor comprising:

a detecting element comprising;

an insulating layer;

a pair of electrodes over the insulating layer; and

a base having an opening over the pair of electrodes; and

a circuit for determining whether the pair of electrodes are in contact or out of contact.

8. A particle detection sensor according to claim 4,

wherein the particle detection sensor further comprises an intake unit for reducing pressure in the opening, which is connected to the opening.

12. A particle detection sensor according to claim 4,

wherein the particle detection sensor further comprises a communication device.

16. A particle detection sensor according to claim 4,

wherein the opening is one of openings are arranged in matrix.

20. A particle detection sensor according to claim 4,

wherein the pair of electrodes have a bridge structure.

21. A method for manufacturing a particle detection sensor, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a second electrode so as to overlap with a part of the first electrode; and

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap.

31. A method for manufacturing a particle detection sensor according to claim 21,

wherein the opening is formed by dry etching or wet etching.

32. A method for manufacturing a particle detection sensor according to claim 21,

wherein the opening is formed by dry etching or wet etching.

22. A method for manufacturing a particle detection sensor, comprising:

forming a semiconductor layer in a first region;

forming an insulating layer in the first region and a second region;

forming a first electrode in the second region over the insulating layer;

forming a second electrode so as to overlap with a part of the first electrode; and

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap.

33. A method for manufacturing a particle detection sensor according to claim 22,

wherein the opening is formed by dry etching or wet etching.

23. A method for manufacturing a particle detection sensor, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a sacrificial layer over the first electrode;

forming a second electrode over the sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap; and

removing the sacrificial layer.

27. A method for manufacturing a particle detection sensor according to claim 23,

wherein the sacrificial layer is removed by dry etching or wet etching.

34. A method for manufacturing a particle detection sensor according to claim 23,

wherein the opening is formed by dry etching or wet etching.

24. A method for manufacturing a particle detection sensor, comprising:

forming an insulating layer;

forming a first electrode over the insulating layer;

forming a sacrificial layer over the first electrode;

forming a second electrode over the sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap; and

removing the sacrificial layer thereby contacting the first electrode and the second electrode.

28. A method for manufacturing a particle detection sensor according to claim 24,

wherein the sacrificial layer is removed by dry etching or wet etching.

35. A method for manufacturing a particle detection sensor according to claim 24,

wherein the opening is formed by dry etching or wet etching.

25. A method for manufacturing a particle detection sensor, comprising:

forming a semiconductor layer over the first electrode;

forming a conductive layer in the first region and a second region;

processing the conductive layer thereby forming a gate electrode in the first region and forming a first sacrificial layer in the second region;

forming an insulating layer so as to cover the gate electrode and the first sacrificial layer;

forming a first electrode over the insulating layer;

forming a second sacrificial over the first electrode;

forming a second electrode over the second sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap;

removing the second sacrificial layer thereby contacting the first electrode and the second electrode; and

removing the first sacrificial layer.

29. A method for manufacturing a particle detection sensor according to claim 25,

wherein the first sacrificial layer or the second sacrificial layer is removed by dry etching or wet etching.

36. A method for manufacturing a particle detection sensor according to claim 25,

wherein the opening is formed by dry etching or wet etching.

26. A method for manufacturing a particle detection sensor, comprising:

forming a semiconductor layer over the first electrode;

forming a conductive layer in the first region and a second region;

processing the conductive layer thereby forming a gate electrode in the first region and forming a first sacrificial layer in the second region;

forming an insulating layer so as to cover the gate electrode and the first sacrificial layer;

forming a first electrode over the insulating layer;

forming a second sacrificial over the first electrode;

forming a second electrode over the second sacrificial layer so as to overlap with a part of the first electrode;

forming an opening in a part of the insulating layer which is under a region where the first electrode and the second electrode overlap;

removing the second sacrificial layer thereby contacting the first electrode and the second electrode; and

removing the first sacrificial layer thereby forming a connection hole.

30. A method for manufacturing a particle detection sensor according to claim 26,

wherein the first sacrificial layer or the second sacrificial layer is removed by dry etching or wet etching.

37. A detection method using a particle detection sensor comprising a detector comprising a pair of electrodes and a base with an opening over the pair of electrodes, parts of the pair of electrodes overlapping under the opening, for detecting a detection object by determining whether the pair of electrodes are in contact or out of contact,

wherein the number of detection objects is counted using a state where the pair of electrodes are in contact and a state where the pair of electrodes are detached when detection objects are adsorbed to the opening.

41. A detection method using a particle detection sensor according to claim 37,

wherein the detector comprises a detection element comprising the base and the pair of electrodes, and

a resistance value of the detection element in the state where the pair of electrodes are in contact is lower than a resistance value in the state where the pair of electrodes are detached, and the number of the detection objects is counted using relative change in the resistance values.

38. A detection method using a particle detection sensor comprising an intake unit and a detector comprising a pair of electrodes and a base with an opening over the pair of electrodes, parts of the pair of electrodes overlapping under the opening, for detecting a detection object by determining whether the pair of electrodes are in contact or out of contact,

wherein the number of detection objects is counted using a state where the pair of electrodes are in contact and a state where pressure is reduced by the intake unit and the pair of electrodes are detached when detection objects are adsorbed to the opening.

42. A detection method using a particle detection sensor according to claim 38,

wherein the detector comprises a detection element comprising the base and the pair of electrodes, and

a resistance value of the detection element in the state where the pair of electrodes are in contact is lower than a resistance value in the state where the pair of electrodes are detached, and the number of the detection objects is counted using relative change in the resistance values.

39. A detection method using a particle detection sensor comprising a detector comprising a pair of electrodes and a base with an opening over the pair of electrodes, parts of the pair of electrodes overlapping under the opening, for detecting a detection object by determining whether the pair of electrodes are in contact or out of contact,

wherein the number of detection objects is counted using a state where the pair of electrodes are detached and a state where the pair of electrodes are in contact when detection objects are adsorbed to the opening.

43. A detection method using a particle detection sensor according to claim 39,

wherein the detector comprises a detection element comprising the base and the pair of electrodes, and

a resistance value of the detection element in the state where the pair of electrodes are in contact is lower than a resistance value in the state where the pair of electrodes are detached, and the number of the detection objects is counted using relative change in the resistance values.

40. A detection method using a particle detection sensor comprising an intake unit and a detector comprising a pair of electrodes and a base with an opening over the pair of electrodes, parts of the pair of electrodes overlapping under the opening, for detecting a detection object by determining whether the pair of electrodes are in contact or out of contact,

wherein the number of detection objects is counted using a state where the pair of electrodes are detached and a state where pressure is reduced by the intake unit and the pair of electrodes are in contact when detection objects are adsorbed to the opening.

44. A detection method using a particle detection sensor according to claim 40,

wherein the detector comprises a detection element comprising the base and the pair of electrodes, and

a resistance value of the detection element in the state where the pair of electrodes are in contact is lower than a resistance value in the state where the pair of electrodes are detached, and the number of the detection objects is counted using relative change in the resistance values.

45. A particle detection sensor comprising:

a detector,

wherein the detector comprises at least one conductor capable of transforming and a base with an opening; and

wherein the one conductor is under the base and the opening.

47. A particle detection sensor according to claim 45,

wherein the particle detection sensor further comprises an intake unit for reducing pressure in the opening, which is connected to the opening.

49. A particle detection sensor according to claim 45,

wherein the particle detection sensor further comprises a communication device.

51. A particle detection sensor according to claim 45,

wherein the opening is one of openings are arranged in matrix.

53. A particle detection sensor according to claim 45,

wherein the pair of electrodes have a bridge structure.

46. A particle detection sensor comprising:

a detector for detecting a detection object by determining whether a pair of electrodes are in contact or out of contact;

wherein the detector comprises a base having an opening; and

wherein the base with the opening are over the pair of electrodes.

48. A particle detection sensor according to claim 46,

wherein the particle detection sensor further comprises an intake unit for reducing pressure in the opening, which is connected to the opening.

50. A particle detection sensor according to claim 46,

wherein the particle detection sensor further comprises a communication device.

52. A particle detection sensor according to claim 46,

wherein the opening is one of openings are arranged in matrix.

54. A particle detection sensor according to claim 46,

wherein the pair of electrodes have a bridge structure.