Method of forming a crystalline structure and a method of manufacturing a semiconductor device

• US 20070044706A1
• Filed: 08/25/2006
• Published: 03/01/2007
• Est. Priority Date: 08/26/2005
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jong-Wook, Shin, Yu-Gyun, Son, Yong-Hoon, Kang, Sung-Kwan
• Application Number:
  US11/509,735
• Publication Number:
  US 20070044706A1
• Time in Patent Office: Days
• US Class Current: 117/8
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 23/025 characterised by the substrate
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/06 Silicon
• CPC Class Codes: C30B 29/08 Germanium
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/02658 Pretreatments cleaning in general H01L21/02041
• CPC Class Codes: H01L 21/28525 the conductive layers comprising semiconducting material H01L21/28518, H01L21/28537 take precedence

Abstract

In a method of forming a single crystalline structure and a method of manufacturing a semiconductor device by using the method of forming the single crystalline structure, a single crystalline seed having elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass is formed. The single crystalline seed is epitaxially grown to form a single crystalline structure.

Claims

1. A method of forming a single crystalline structure, the method comprising:

forming a single crystalline seed having elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass; and

epitaxially growing the single crystalline seed to form a single crystalline structure.

2. The method of claim 1, wherein the element is phosphorus.

3. The method of claim 2, wherein the phosphorus is supplied from a phosphine gas.

4. The method of claim 1, wherein the elements is boron.

5. The method of claim 4, wherein the boron is supplied from at least one gas selected from the group consisting of a boron chloride gas and a diborane gas.

6. The method of claim 1, wherein the single crystalline seed includes at least one material selected from the group consisting of silicon, germanium and carbon.

7. The method of claim 1, wherein forming the single crystalline seed comprises:

forming a preliminary single crystalline seed; and

doping the element into the preliminary single crystalline seed by using an ion implantation process.

8. The method of claim 7, wherein a doping concentration of the element is about 1×

10¹⁸ EA/Cm³ to about 1×

10²⁰ EA/Cm³.

9. The method of claim 1, wherein forming the single crystalline seed comprises:

forming a preliminary single crystalline seed; and

doping the element into the preliminary single crystalline seed by an in-situ doping process in epitaxially growing the preliminary single crystalline seed.

10. The method of claim 9, wherein a doping concentration of the element is about 1×

10¹⁸ EA/Cm³ to about 1×

10²⁰ EA/Cm³.

11. The method of claim 1, wherein forming the single crystalline seed comprises:

forming a preliminary single crystalline seed; and

attaching the elements to a surface of the preliminary single crystalline seed.

12. A method of manufacturing a semiconductor device, the method comprising:

forming a preliminary single crystalline seed;

forming an insulation layer pattern on the preliminary single crystalline seed, the insulation layer pattern having an opening exposing a preliminary contact region of the preliminary single crystalline seed;

forming a single crystalline seed having a contact region formed by doping elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass; and

epitaxially growing the contact region to form a single crystalline structure filling up the opening.

13. A method of manufacturing a semiconductor device, the method comprising:

forming a preliminary single crystalline seed;

forming an insulation layer pattern on the preliminary single crystalline seed, the insulation layer pattern having an opening exposing a preliminary contact region of the preliminary single crystalline seed;

forming a single crystalline seed including the preliminary single crystalline seed and an epitaxial layer, the epitaxial layer being formed by epitaxially growing the preliminary contact region of the preliminary single crystalline seed with doping elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass into the preliminary contact region; and

epitaxially growing the epitaxial layer to form a single crystalline structure filling up the opening.

14. A method of manufacturing a semiconductor device, the method comprising:

forming a preliminary single crystalline seed;

forming an insulation layer pattern on the preliminary single crystalline seed, the insulation layer pattern having an opening exposing a preliminary contact region of the preliminary single crystalline seed;

attaching elements combining with oxygen to form a network former capable of being easily connected to a network of oxide glass to the preliminary single crystalline seed to form a single crystalline seed including the elements and the preliminary single crystalline seed; and

epitaxially growing the preliminary contact region where the elements are attached to form a single crystalline structure filling up the opening.