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Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device

  • US 20070045654A1
  • Filed: 08/30/2006
  • Published: 03/01/2007
  • Est. Priority Date: 08/30/2005
  • Status: Active Grant
First Claim
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1. A group III-nitride semiconductor thin film comprising:

  • a (1-102)-plane sapphire substrate;

    a buffer layer located on the sapphire substrate and made of AlInN; and

    an epitaxial growth layer located on the buffer layer and made of group III-nitride.

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