Group III-nitride semiconductor thin film, method for fabricating the same, and group III-nitride semiconductor light emitting device
First Claim
1. A group III-nitride semiconductor thin film comprising:
- a (1-102)-plane sapphire substrate;
a buffer layer located on the sapphire substrate and made of AlInN; and
an epitaxial growth layer located on the buffer layer and made of group III-nitride.
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Accused Products
Abstract
Disclosed herein is a high-quality group III-nitride semiconductor thin film and group III-nitride semiconductor light emitting device using the same. To obtain the group III-nitride semiconductor thin film, an AlInN buffer layer is formed on a (1-102)-plane (so called r-plane) sapphire substrate by use of a MOCVD apparatus under atmospheric pressure while controlling a temperature of the substrate within a range from 850 to 950 degrees Celsius, and then, GaN-based compound, such as GaN, AlGaN or the like, is epitaxially grown on the buffer layer at a high temperature. The group III-nitride semiconductor light emitting device is fabricated by using the group III-nitride semiconductor thin film as a base layer.
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Citations
16 Claims
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1. A group III-nitride semiconductor thin film comprising:
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a (1-102)-plane sapphire substrate;
a buffer layer located on the sapphire substrate and made of AlInN; and
an epitaxial growth layer located on the buffer layer and made of group III-nitride. - View Dependent Claims (2, 8, 9, 10)
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3. A group III-nitride semiconductor thin film comprising:
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a (1-102)-plane sapphire substrate;
a buffer layer located on the sapphire substrate and made of group III-nitride;
an intermediate layer located on the buffer layer and formed by stacking two or more multi-level layers one above another, each multi-level layer including a first metal layer and a second nitrogen layer; and
an epitaxial growth layer located on the intermediate layer and made of group III-nitride. - View Dependent Claims (5, 6, 7)
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4. A group III-nitride semiconductor thin film comprising:
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a (1-102)-plane sapphire substrate;
an intermediate layer located on the sapphire substrate and formed by stacking two or more multi-level layers one above another, each multi-level layer including a first metal layer and a second nitrogen layer; and
an epitaxial growth layer located on the intermediate layer and made of group III-nitride.
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11. A method for fabricating a group III-nitride semiconductor thin film comprising:
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forming a buffer layer, which is made of AlInN, on a (1-102)-plane sapphire substrate while controlling a temperature of the sapphire substrate in a range from 850 degrees Celsius to 950 degrees Celsius; and
epitaxially growing group III-nitride on the buffer layer while controlling the sapphire substrate to a temperature higher than the temperature of the sapphire substrate controlled during the formation of the buffer layer. - View Dependent Claims (12)
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13. A method for fabricating a group III-nitride semiconductor thin film comprising:
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forming a buffer layer, which is made of group III-nitride, on a (1-102)-plane sapphire substrate while controlling the sapphire substrate to a first temperature;
forming an intermediate layer on the buffer layer, the intermediate layer including two or more multi-level layers obtained by repeatedly forming the multi-level layer including a first metal layer and a second nitrogen layer; and
epitaxially growing group III-nitride on the intermediate layer while controlling the sapphire substrate to a second temperature higher than the first temperature. - View Dependent Claims (15, 16)
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14. A method for fabricating a group III-nitride semiconductor thin film comprising:
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forming an intermediate layer on a (1-102)-plane sapphire substrate, the intermediate layer including two or more multi-level layers obtained by repeatedly forming the multi-level layer including a first metal layer and a second nitrogen layer; and
epitaxially growing group III-nitride on the intermediate layer.
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Specification