Semiconductor structures with body contacts and fabrication methods thereof
First Claim
1. A semiconductor structure comprising:
- a semiconductor wafer including a semiconductor substrate, a semiconductor layer with a plurality of semiconductor bodies, and a buried dielectric layer separating said semiconductor substrate from said semiconductor layer;
a plurality of memory cells built in an array on said semiconductor wafer, each of said memory cells including a storage capacitor and an access device, and said access device including a vertical channel region defined in one of the semiconductor bodies and a gate configured to switch current flow through said vertical channel region to said storage capacitor; and
a body contact of an electrically conductive material extending through said buried dielectric layer, said body contact having a first end electrically connected with one of said semiconductor bodies and a second end electrically connected with said semiconductor substrate.
3 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor structure for a dynamic random access memory (DRAM) cell array that includes a plurality of vertical memory cells built on a semiconductor-on-insulator (SOI) wafer and a body contact electrically coupling a semiconductor body and a semiconductor substrate of the SOI wafer. The semiconductor body includes a channel region for the access device of one of the vertical memory cells. The body contact, which extends through a buried dielectric layer of the SOI wafer, provides a current leakage path that reduces the impact of floating body effects upon the vertical memory cell. The body contact may be formed by etching a via that extends through the semiconductor body and buried dielectric layer of the SOI wafer and extends into the substrate and partially filling the via with a conductive material that electrically couples the semiconductor body with the substrate.
51 Citations
22 Claims
-
1. A semiconductor structure comprising:
-
a semiconductor wafer including a semiconductor substrate, a semiconductor layer with a plurality of semiconductor bodies, and a buried dielectric layer separating said semiconductor substrate from said semiconductor layer;
a plurality of memory cells built in an array on said semiconductor wafer, each of said memory cells including a storage capacitor and an access device, and said access device including a vertical channel region defined in one of the semiconductor bodies and a gate configured to switch current flow through said vertical channel region to said storage capacitor; and
a body contact of an electrically conductive material extending through said buried dielectric layer, said body contact having a first end electrically connected with one of said semiconductor bodies and a second end electrically connected with said semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A method for forming a semiconductor structure in a semiconductor wafer including a semiconductor substrate, a semiconductor layer with a plurality of semiconductor bodies, and a buried dielectric layer separating the semiconductor substrate from the semiconductor layer, the method comprising:
-
building a plurality of vertical memory cells each in a corresponding one of a plurality of trenches in the semiconductor wafer;
forming a via extending through one of the semiconductor bodies and the buried dielectric layer and extending into the semiconductor substrate; and
at least partially filling the via with a plug of an electrically conductive material that extends through the buried dielectric layer to define a body contact having a first end electrically connected with the semiconductor body and a second end electrically connected with the semiconductor substrate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
-
Specification