Mounting Spring Elements on Semiconductor Devices, and Wafer-Level Testing Methodology
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Abstract
Resilient contact structures are mounted directly to bond pads on semiconductor dies, prior to the dies being singulated (separated) from a semiconductor wafer. This enables the semiconductor dies to be exercised (e.g., tested and/or burned-in) by connecting to the semiconductor dies with a circuit board or the like having a plurality of terminals disposed on a surface thereof. Subsequently, the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such as wiring substrates, semiconductor packages, etc.). Using the all-metallic composite interconnection elements of the present invention as the resilient contact structures, burn-in can be performed at temperatures of at least 150° C., and can be completed in less than 60 minutes.
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Citations
52 Claims
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1-46. -46. (canceled)
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47. An apparatus comprising:
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a semiconductor wafer comprising a plurality of unsingulated semiconductor devices on said wafer, said semiconductor devices comprising a plurality of resilient contact structures mounted thereon;
a test board comprising a plurality of contact elements, said test board disposed in proximity to said semiconductor wafer, forming pressure connections between ones of said resilient contact structures and corresponding contact elements of said test board; and
means for exercising at least one of said semiconductor devices. - View Dependent Claims (48, 49, 50, 51, 52)
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48. The apparatus of claim 47 further comprising means for elevating a temperature of said at least one semiconductor device while exercising said at least one semiconductor device.
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49. The apparatus of claim 48, wherein said means for elevating is capable of elevating said temperature of said at least one semiconductor devices to least 125°
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50. The apparatus of claim 47, wherein said means for exercising exercises said at least one semiconductor device by providing electrical signals through said contact elements of said test board to said ones of said resilient contact structures.
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51. The apparatus of claim 50 further comprising means for monitoring a response of said at least one semiconductor device to said electrical signals.
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52. The apparatus of claim 51 further comprising means for evaluating said response.
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48. The apparatus of claim 47 further comprising means for elevating a temperature of said at least one semiconductor device while exercising said at least one semiconductor device.
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Specification
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Current AssigneeFormFactor Incorporated
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Original AssigneeFormFactor Incorporated
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InventorsEldridge, Benjamin, Grube, Gary, Khandros, Igor, Mathieu, Ga tan
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Application NumberUS11/552,856Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current324/750.30CPC Class CodesB23K 1/0008 specially adapted for parti...B23K 20/004 Wire weldingB23K 2101/40 Semiconductor devicesC23C 18/1605 by maskingC23C 18/165 Multilayered product layere...C25D 21/02 Heating or coolingC25D 5/22 Electroplating combined wit...C25D 5/605 Surface topography of the l...C25D 7/123 Semiconductors first coated...G01R 1/07342 the body of the probe being...G01R 31/2856 Internal circuit aspects, e...G01R 31/2863 Contacting devices, e.g. so...G01R 31/2884 using dedicated test connec...G01R 31/2886 Features relating to contac...H01L 21/4853 Connection or disconnection...H01L 21/4889 Connection or disconnection...H01L 21/563 Encapsulation of active fac...H01L 21/6835 using temporarily an auxili...H01L 22/20 Sequence of activities cons...H01L 2223/54453 for use prior to dicingH01L 2224/02311 : Additive methodsH01L 2224/03912 : the bump being used as a ma...H01L 2224/0401 : Bonding areas specifically ...H01L 2224/04042 : Bonding areas specifically ...H01L 2224/0558 : being stackedH01L 2224/05599 : MaterialH01L 2224/05624 : Aluminium [Al] as principal...H01L 2224/05644 : Gold [Au] as principal cons...H01L 2224/11003 : for holding or transferring...H01L 2224/1132 : Screen printing, i.e. using...H01L 2224/11334 : using preformed bumpsH01L 2224/1134 : Stud bumping, i.e. using a ...H01L 2224/1147 : using a lift-off maskH01L 2224/1184 : involving a mechanical proc...H01L 2224/13022 : the bump connector being at...H01L 2224/13099 : MaterialH01L 2224/13124 : Aluminium [Al] as principal...H01L 2224/13144 : Gold [Au] as principal cons...H01L 2224/13147 : Copper [Cu] as principal co...H01L 2224/13582 : Two-layer coatingH01L 2224/13639 : Silver [Ag] as principal co...H01L 2224/13644 : Gold [Au] as principal cons...H01L 2224/13647 : Copper [Cu] as principal co...H01L 2224/13655 : Nickel [Ni] as principal co...H01L 2224/13657 : Cobalt [Co] as principal co...H01L 2224/16145 : the bodies being stackedH01L 2224/274 : by blanket deposition of th...H01L 2224/29075 : Plural core membersH01L 2224/29099 : MaterialH01L 2224/2929 : with a principal constituen...H01L 2224/293 : with a principal constituen...H01L 2224/45014 : Ribbon connectors, e.g. rec...H01L 2224/45015 : being circularH01L 2224/45124 : Aluminium (Al) as principal...H01L 2224/45144 : Gold (Au) as principal cons...H01L 2224/45147 : Copper (Cu) as principal co...H01L 2224/4556 : Disposition, e.g. coating o...H01L 2224/45572 : Two-layer stack coatingH01L 2224/45599 : MaterialH01L 2224/48624 : Aluminium (Al) as principal...H01L 2224/48644 : Gold (Au) as principal cons...H01L 2224/48724 : Aluminium (Al) as principal...H01L 2224/48744 : Gold (Au) as principal cons...H01L 2224/48824 : Aluminium (Al) as principal...H01L 2224/48844 : Gold (Au) as principal cons...H01L 2224/49109 : outside the semiconductor o...H01L 2224/73203 : Bump and layer connectorsH01L 2224/81801 : Soldering or alloyingH01L 2224/83851 : being an anisotropic conduc...H01L 2224/85201 : Compression bondingH01L 2224/85205 : Ultrasonic bondingH01L 2224/85399 : MaterialH01L 2224/90 : Methods for connecting semi...H01L 2225/0651 : Wire or wire-like electrica...H01L 2225/06527 : Special adaptation of elect...H01L 2225/06555 : Geometry of the stack, e.g....H01L 2225/06572 : Auxiliary carrier between d...H01L 23/49811 : Additional leads joined to ...H01L 23/544 : Marks applied to semiconduc...H01L 24/03 : Manufacturing methodsH01L 24/05 : of an individual bonding areaH01L 24/11 : Manufacturing methods for b...H01L 24/12 : Structure, shape, material ...H01L 24/16 : of an individual bump conne...H01L 24/27 : Manufacturing methodsH01L 24/45 : of an individual wire conne...H01L 24/48 : of an individual wire conne...H01L 24/49 : of a plurality of wire conn...H01L 24/72 : Detachable connecting means...H01L 24/81 : using a bump connectorH01L 24/83 : using a layer connectorH01L 24/90 : Methods for connecting semi...H01L 24/94 : at wafer-level, i.e. with c...H01L 25/0652 : the devices being arranged ...H01L 25/16 : the devices being of types ...H01L 2924/00 : Indexing scheme for arrange...H01L 2924/00011 : Not relevant to the scope o...H01L 2924/00013 : Fully indexed contentH01L 2924/00014 : the subject-matter covered ...H01L 2924/01005 : Boron [B]H01L 2924/01006 : Carbon [C]H01L 2924/01012 : Magnesium [Mg]H01L 2924/01013 : Aluminum [Al]H01L 2924/01014 : Silicon [Si]H01L 2924/01015 : Phosphorus [P]H01L 2924/01019 : Potassium [K]H01L 2924/01022 : Titanium [Ti]H01L 2924/01024 : Chromium [Cr]H01L 2924/01027 : Cobalt [Co]H01L 2924/01028 : Nickel [Ni]H01L 2924/01029 : Copper [Cu]H01L 2924/01033 : Arsenic [As]H01L 2924/01042 : Molybdenum [Mo]H01L 2924/01045 : Rhodium [Rh]H01L 2924/01046 : Palladium [Pd]H01L 2924/01047 : Silver [Ag]H01L 2924/01049 : Indium [In]H01L 2924/0105 : Tin [Sn]H01L 2924/01051 : Antimony [Sb]H01L 2924/01074 : Tungsten [W]H01L 2924/01075 : Rhenium [Re]H01L 2924/01078 : Platinum [Pt]H01L 2924/01079 : Gold [Au]H01L 2924/01082 : Lead [Pb]H01L 2924/01322 : Eutectic Alloys, i.e. obtai...H01L 2924/014 : Solder alloysH01L 2924/05042 : Si3N4H01L 2924/10253 : Silicon [Si]H01L 2924/10329 : Gallium arsenide [GaAs]H01L 2924/12042 : LASERH01L 2924/14 : Integrated circuitsH01L 2924/1532 : the connection portion bein...H01L 2924/181 : EncapsulationH01L 2924/19041 : being a capacitorH01L 2924/20104 : Temperature range 100 C=<T<...H01L 2924/20105 : Temperature range 150 C=<T<...H01L 2924/206 : Length rangesH01L 2924/30107 : InductanceH01L 2924/3011 : ImpedanceH01L 2924/3025 : Electromagnetic shieldingH01R 12/52 : connecting to other rigid p...H05K 1/141 : One or more single auxiliar...H05K 2201/0397 : TabH05K 2201/068 : wherein the coefficient of ...H05K 2201/1031 : Surface mounted metallic co...H05K 2201/10318 : Surface mounted metallic pinsH05K 2201/10378 : InterposersH05K 2201/10719 : Land grid array [LGA]H05K 2201/10734 : Ball grid array [BGA]; Bump...H05K 2201/10757 : Bent leadsH05K 2201/10878 : Means for retention of a le...H05K 2201/10909 : Materials of terminal, e.g....H05K 2201/10946 : Leads attached onto leadles...H05K 3/20 : by affixing prefabricated c...H05K 3/308 : Adaptations of leads connec...H05K 3/326 : the printed circuit having ...H05K 3/3421 : Leaded componentsH05K 3/3426 : characterised by the leadsH05K 3/368 : parallel to each other H05K...H05K 3/4015 : using auxiliary conductive ...H05K 3/4092 : Integral conductive tabs, i...H05K 7/1069 : with spring contact piecesY02P 70/50 : Manufacturing or production...Y10S 977/712 : formed from plural layers o...Y10S 977/723 : On an electrically insulati...Y10T 29/49004 : including measuring or test...Y10T 29/49117 : Conductor or circuit manufa...Y10T 29/4913 : Assembling to base an elect...Y10T 29/49144 : by metal fusionY10T 29/49147 : Assembling terminal to baseY10T 29/49149 : by metal fusion bondingY10T 29/49169 : Assembling electrical compo...Y10T 29/49171 : with encapsulatingY10T 29/49204 : Contact or terminal manufac...Y10T 29/49208 : by assembling plural partsY10T 29/4922 : with molding of insulationY10T 29/49812 : Temporary protective coatin...Y10T 428/12396 : Discontinuous surface compo...Y10T 428/12528 : Semiconductor component