Magnetoresistive spin valve sensor with tri-layer free layer

• US 20070047159A1
• Filed: 08/23/2005
• Published: 03/01/2007
• Est. Priority Date: 08/23/2005
• Status: Active Grant

• Current Assignee: Headway Technologies Incorporated
• Original Assignee: Headway Technologies Incorporated
• Inventors: Chen, Yu-Hsia, Zhang, Kunliang, Li, Min, Wang, Hui-Chuan, Zhao, Tong
• Granted Patent: US 7,333,306 B2
• Time in Patent Office: Days
• US Class Current: 360/324.120
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: Y10T 29/49028 Mounting multitrack head
• CPC Class Codes: Y10T 29/49032 Fabricating head structure or component thereof
• CPC Class Codes: Y10T 29/49041 with significant slider/housing shaping or treating
• CPC Class Codes: Y10T 29/49046 with etching or machining of magnetic material
• CPC Class Codes: Y10T 428/1121 Multilayer

Abstract

A TMR sensor, a CPP GMR sensor and a CCP CPP GMR sensor all include a tri-layered free layer that is of the form CoFe/CoFeB/NiFe, where the atom percentage of Fe can vary between 5% and 90% and the atom percentage of B can vary between 5% and 30%. The sensors also include SyAP pinned layers which, in the case of the GMR sensors include at least one layer of CoFe laminated onto a thin layer of Cu. In the CCP CPP sensor, a layer of oxidized aluminum containing segregated particles of copper is formed between the spacer layer and the free layer. All three configurations exhibit extremely good values of coercivity, areal resistance, GMR ratio and magnetostriction.

Claims

1. A TMR sensor element having improved free layer coercivity, improved magnetoresistive ratio, low areal resistance and improved magnetostriction properties comprising:

a seed layer;

a pinning layer formed on said seed layer;

a pinned layer formed on said pinning layer and magnetically coupled thereto;

a tunneling barrier layer formed on said pinned layer;

a multi-layered composite free layer including at least three magnetic layers formed on said barrier layer;

a capping layer formed on said free layer.

2. The TMR sensor of claim 1 wherein said multi-layered composite free layer is formed as a lamination of the following three contiguous ferromagnetic layers and includes at least the following sequence:

a first ferromagnetic material layer that is an alloy including Co and Fe;

a third ferromagnetic material layer that is an alloy including Ni and Fe;

a second ferromagnetic material layer, that is an alloy including Co, Fe, and B and wherein said second layer is interposed between said first and third layers.

3. The TMR sensor of claim 2 wherein said first ferromagnetic material layer is an alloy of the form Co(100-x₁)Fe(x₁), said second ferromagnetic material layer is an alloy of the form Co(100-x₂-y)Fe(x₂)B(y) and said third ferromagnetic material layer is an alloy of the form Ni(100-x₃)Fe(x₃) and wherein x₁ is between approximately 10% and 90%, x₂ is between approximately 5% and 90% and x₃ is between approximately 5% and 70% and all are atom percentages of Fe and wherein y is an atom percentage of B and can be between 5% and 30% percent.

4. The TMR sensor of claim 2 wherein the thickness of the first ferromagnetic layer is between 5 and 30 angstroms, the thickness of the second ferromagnetic layer is between 5 and 80 angstroms and the thickness of the third ferromagnetic layer is between 5 and 40 angstroms.

5. The TMR sensor of claim 2 wherein the percentage of Fe by number of atoms in each of said layers is between approximately 5% and 90% and wherein said first layer may contain Ni, B, Nb, and Zr, said second layer may contain Co, B, Nb and Zr and said third layer may contain Ni, Nb and Zr.

6. The TMR sensor of claim 1 wherein said tunneling barrier layer is a layer of Al formed to a thickness between approximately 4 and 8 angstroms and subsequently naturally oxidized to form a layer of AlOx.

7. A method of forming a TMR sensor element having improved free layer coercivity, improved magnetoresistive ratio, low areal resistance and improved magnetostriction properties comprising:

providing a seed layer;

forming a pinning layer on said seed layer;

forming a pinned layer on said pinning layer;

forming a tunneling barrier layer on said pinned layer;

forming a composite, multi-layered free layer on said barrier layer;

forming a capping layer on said free layer;

magnetically coupling said pinning layer to said pinned layer.

8. The method of claim 7 wherein said barrier layer is a layer of AlOx formed by depositing a layer of Al to a thickness between approximately 4 and 8 angstroms and subsequently oxidizing said layer by a process of natural oxidation.

9. The method of claim 7 wherein said multi-layered composite free layer is formed as a tri-layer by a method comprising:

forming a first ferromagnetic layer that includes at least an alloy of Fe and Co;

forming on said first ferromagnetic layer a second ferromagnetic layer that includes at least an alloy of Co, Fe and B;

forming on said second ferromagnetic layer a third ferromagnetic layer that includes at least an alloy of Fe and Ni.

10. The method of claim 9 wherein said first ferromagnetic material layer is an alloy of the form Co(100-x₁)Fe(x₁), said second ferromagnetic material layer is an alloy of the form Co(100-x₂-y)Fe(x₂)B(y) and said third ferromagnetic material layer is an alloy of the form Ni(100-x₃)Fe(x₃) and wherein x₁ is between approximately 10% and 90% , x₂ is between approximately 5% and 90% and x₃ is between approximately 5% and 70% and all are atom percentages of Fe and wherein y is an atom percentage of B and can be between 5% and 30% percent.

11. The method of claim 10 wherein said first ferromagnetic layer is formed to a thickness between approximately 5 and 30 angstroms, wherein said second ferromagnetic layer is formed to a thickness between approximately 5 and 40 angstroms and wherein said third ferromagnetic layer is formed to a thickness between approximately 5 and 80 angstroms.

12. The method of claim 10 wherein the value of the magnetostriction coefficient of said composite free layer is adjusted by the choice of thicknesses of said first, second and third ferromagnetic layers.

13. A CCP CPP GMR sensor having improved coercivity, improved areal resistance, improved GMR ratio and improved magnetostriction properties comprising:

a seed layer;

a pinning layer formed on said seed layer;

a pinned layer formed on said pinning layer and magnetically coupled thereto;

a first conducting, non-magnetic spacer layer formed on said pinned layer;

a CCP layer formed on said first spacer layer;

a second spacer layer formed on said CCP layer;

a composite multi-layer free layer formed on said second spacer layer;

a capping layer formed on said free layer.

14. The GMR sensor of claim 13 wherein said pinned layer is formed as a multi-layered SyAP layer comprising:

a ferromagnetic layer denoted AP2 formed on said pinning layer;

an antiferromagnetically coupling layer formed on said AP2 layer;

a multi-layered ferromagnetic layer denoted AP1 formed on said coupling layer, said AP1 including at least one ferromagnetic layer laminated to a thin, non-magnetic conducting layer.

15. The GMR sensor of claim 13 wherein said CCP layer is a layer of dielectric material in which has been formed a conducting pathway of segregated conducting particles.

16. The GMR sensor of claim 13 wherein said CCP layer is formed as an Al/Cu laminated bi-layer, wherein said Al layer is oxidized to form a layer of AlOx and said layer of Cu is formed into a conducting pathway of segregated particles by a RF PIT process followed by an RF IAO process.

17. The GMR sensor of claim 13 wherein said multi-layered composite free layer is formed as a lamination of the following three contiguous ferromagnetic layers and includes at least the following sequence:

a first ferromagnetic material layer that is an alloy including Co and Fe;

a third ferromagnetic material layer that is an alloy including Ni and Fe;

a second ferromagnetic material layer, that is an alloy including Co, Fe, and B and wherein said second layer is interposed between said first and third layers.

18. The GMR sensor of claim 17 wherein said first ferromagnetic material layer is an alloy of the form Co(100-x₁)Fe(x₁), said second ferromagnetic material layer is an alloy of the form Co(100-x₂-y)Fe(x₂)B(y) and said third ferromagnetic material layer is an alloy of the form Ni(100-x₃)Fe(x₃) and wherein x₁ is between approximately 10% and 90%, x₂ is between approximately 5% and 90% and x₃ is between approximately 5% and 70% and all are atom percentages of Fe and wherein y is an atom percentage of B and can be between 5% and 30% percent.

19. The GMR sensor of claim 18 wherein the thickness of the first ferromagnetic layer is between 5 and 30 angstroms, the thickness of the second ferromagnetic layer is between 5 and 80 angstroms and the thickness of the third ferromagnetic layer is between 5 and 40 angstroms.

20. The GMR sensor of claim 17 wherein the percentage of Fe by number of atoms in each of said layers is between approximately 5% and 90% and wherein said first layer may contain Ni, B, Nb, and Zr, said second layer may contain Co, B, Nb and Zr and said third layer may contain Ni, Nb and Zr.

21. A method of forming a CCP CPP GMR sensor having improved coercivity, improved areal resistance, improved GMR ratio and improved magnetostriction properties comprising:

providing a seed layer;

forming a pinning layer on said seed layer;

forming a pinned layer on said pinning layer;

forming a first conducting, non-magnetic spacer layer on said pinned layer;

forming a CCP layer on said first spacer layer;

forming a second conducting, non-magnetic spacer layer on said CCP layer;

forming a multi-layer composite free layer on said second spacer layer;

forming a capping layer on said free layer;

magnetically coupling said pinning layer to said pinned layer.

22. The method of claim 21 wherein said pinned layer is formed as a multi-layered SyAP layer comprising:

forming a ferromagnetic layer denoted AP2 on said pinning layer;

forming an antiferromagnetically coupling layer on said AP2 layer;

forming a multi-layered ferromagnetic layer denoted AP1 on said coupling layer, said AP1 including at least one ferromagnetic layer laminated to a thin, non-magnetic conducting layer.

23. The method of claim 21 wherein said first and second conducting, non-magnetic spacer layers are layers of Cu, wherein said first spacer layer is formed to a thickness between approximately 5 and 6 angstroms and said second spacer layer is formed to a thickness between approximately 2 and 4 angstroms.

24. The method of claim 21 wherein said CCP layer is a layer of dielectric material in which has been formed a conducting pathway of segregated conducting particles by a method comprising:

forming a bilayer of Al/Cu on said first conducting, non-magnetic spacer layer;

oxidizing said Al portion of said bilayer by a process of RF PIT;

forming segregated Cu particles within said oxidized Al portion by a process of RFIAO;

wherein

said RF PIT process comprises a 40 second flow of oxygen at a flow rate of 50 sccm at a power input of 20 watts and said RFIAO process comprises a flow of a mixture of Ar and O at a ratio of 50/0.8 Ar/O for 30 seconds at a power input of 27 watts.

25. The method of claim 21 wherein said multi-layered composite free layer is a tri-layer whose formation comprises:

forming a first ferromagnetic material layer that is an alloy including Co and Fe;

forming on said first ferromagnetic layer a second ferromagnetic material layer, that is an alloy including Co, Fe, and B;

forming on said second ferromagnetic layer a third ferromagnetic material layer that is an alloy including Ni and Fe.

26. The method of claim 24 wherein said first ferromagnetic material layer is an alloy of the form Co(100-x₁)Fe(x₁), said second ferromagnetic material layer is an alloy of the form Co(100-x₂-y)Fe(x₂)B(y) and said third ferromagnetic material layer is an alloy of the form Ni(100-x₃)Fe(x₃) and wherein x₁ is between approximately 10% and 90%, x₂ is between approximately 5% and 90% and x₃ is between approximately 5% and 70% and all are atom percentages of Fe and wherein y is an atom percentage of B and can be between 5% and 30% percent.

27. The method of claim 22 wherein said AP1 layer is at least one layer of CoFe(70%) formed to a thickness between approximately 10 and 13 angstroms on which is laminated a layer of Cu formed to a thickness between approximately 1 and 3 angstroms and wherein x₁, x₂, and x₃ are approximately 70%.

28. The method of claim 26 wherein the thickness of said first ferromagnetic layer is between 2 and 30 angstroms, the thickness of said second ferromagnetic layer is between 5 and 80 angstroms and the thickness of said third ferromagnetic layer is between 5 and 40 angstroms.

29. A CPP GMR sensor having improved coercivity, improved areal resistance, improved GMR ratio and improved magnetostriction properties comprising:

a seed layer;

a pinning layer formed on said seed layer;

a pinned layer formed on said pinning layer and magnetically coupled thereto;

a conducting, non-magnetic spacer layer formed on said pinned layer;

a tri-layer composite free layer formed on said spacer layer;

a capping layer formed on said free layer.

30. The GMR sensor of claim 29 wherein said pinned layer is formed as a multi-layered SyAP layer comprising:

a ferromagnetic layer denoted AP2 formed on said pinning layer;

an antiferromagnetically coupling layer formed on said AP2 layer;

a multi-layered ferromagnetic layer denoted AP1 formed on said coupling layer, said AP1 including at least one ferromagnetic layer laminated to a thin, non-magnetic conducting layer.

31. The GMR sensor of claim 29 wherein said multi-layered composite free layer is formed as a lamination of the following three contiguous ferromagnetic layers and includes at least the following sequence:

a first ferromagnetic material layer that is an alloy including Co and Fe;

a third ferromagnetic material layer that is an alloy including Ni and Fe;

a second ferromagnetic material layer, that is an alloy including Co, Fe, and B and wherein said second layer is interposed between said first and third layers.

32. The GMR sensor of claim 31 wherein said first ferromagnetic material layer is an alloy of the form Co(100-x₁)Fe(x₁), said second ferromagnetic material layer is an alloy of the form Co(100-x₂-y)Fe(x₂)B(y) and said third ferromagnetic material layer is an alloy of the form Ni(100-x₃)Fe(x₃) and wherein x₁ is between approximately 10% and 90%, x₂ is between approximately 5% and 90% and x₃ is between approximately 5% and 70% and all are atom percentages of Fe and wherein y is an atom percentage of B and can be between 5% and 30% percent.

33. The GMR sensor of claim 31 wherein the thickness of the first ferromagnetic layer is between 2 and 30 angstroms, the thickness of the second ferromagnetic layer is between 5 and 80 angstroms and the thickness of the third ferromagnetic layer is between 5 and 40 angstroms.

34. The GMR sensor of claim 31 wherein the percentage of Fe by number of atoms in each of said layers is between approximately 5% and 90% and wherein said first layer may contain Ni, B, Nb, and Zr, said second layer may contain Co, B, Nb and Zr and said third layer may contain Ni, Nb and Zr.