Precision resonance frequency tuning method for photonic crystal structures

• US 20070047898A1
• Filed: 02/15/2006
• Published: 03/01/2007
• Est. Priority Date: 08/31/2005
• Status: Abandoned Application

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Cheng, Chen-Hsiung
• Application Number:
  US11/354,606
• Publication Number:
  US 20070047898A1
• Time in Patent Office: Days
• US Class Current: 385/147
• CPC Class Codes: G01Q 80/00 Applications, other than SPM, of scanning-probe techniques manufacture or treatment of nanostructures B82B3/00; recording or reproducing information using near-field interaction G11B9/12, G11B11/24, G11B13/08
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02F 2202/32 Photonic crystals

Abstract

A method for red-tuning the resonance frequency of a photonic crystal structure that includes a plurality of holes, using a near-field scanning optical microscope (NSOM) system. Part of the photonic crystal structure is ablated using the NSOM system to form submicron scale debris on a top surface of the photonic crystal structure. The tip of the NSOM system is used to move a portion of the submicron scale debris across the top surface of the photonic crystal structure to partially fill at least one predetermined hole of the plurality of holes of the photonic crystal structure. The portion of the submicron scale debris partially filling the predetermined hole(s) may be annealed.

Claims

1. A method for red-tuning the resonance frequency of a photonic crystal structure that includes a plurality of holes, using a near-field scanning optical microscope (NSOM) system, the method comprising the steps of:

a) ablating part of the photonic crystal structure using the NSOM system to form submicron scale debris on a top surface of the photonic crystal structure; and

b) using a tip of the NSOM system to move a portion of the submicron scale debris across the top surface of the photonic crystal structure to partially fill at least one predetermined hole of the plurality of holes of the photonic crystal structure.

2. The method according to claim 1, wherein step (a) includes the steps of:

a1) contacting the tip of the NSOM system on a predetermined location of the top surface of the photonic crystal structure; and

a2) coupling laser pulses from a pulsed laser source of the NSOM system through the tip of the NSOM system to ablate the part of the photonic crystal structure.

3. The method according to claim 2, wherein step (a1) includes the steps of:

a1a) locating the predetermined location of the top surface of the photonic crystal structure;

a1b) aligning the tip of the NSOM system with the predetermined location of the top surface of the photonic crystal structure in a plane approximately parallel to the top surface; and

a1c) bringing the tip of the NSOM system and the top surface of the photonic crystal structure together along a line substantially normal to the plane until the tip exerts a predetermined force on the predetermined location.

4. The method according to claim 3, wherein step (ala) includes at least one of:

profiling the top surface of the photonic crystal structure using the NSOM system to locate the predetermined location of the top surface of the photonic crystal structure;

or

imaging the top surface of the photonic crystal structure using an optical camera to locate the predetermined location of the top surface of the photonic crystal structure.

5. The method according to claim 1, wherein step (b) includes the steps of:

b1) locating the submicron scale debris formed on the top surface of the photonic crystal structure in step (a); and

b2) using the tip of the NSOM system to move the portion of the submicron scale debris across the top surface of the photonic crystal structure to partially fill the at least one predetermined hole.

6. The method according to claim 5, wherein step (b1) includes at least one of:

profiling the top surface of the photonic crystal structure using the NSOM system to locate the submicron scale debris formed on the top surface of the photonic crystal structure;

or

imaging the top surface of the photonic crystal structure using an optical camera to locate the submicron scale debris formed on the top surface of the photonic crystal structure.

7. The method according to claim 1, wherein step (b) includes the steps of:

b1) measuring an initial resonance frequency of the photonic crystal structure;

b2) comparing the initial resonance frequency to a desired resonance frequency range;

b3) determining a volume of the at least one predetermined hole to fill with the portion of the submicron scale debris based on the comparison of step (b2); and

b4) using the tip of the NSOM system to move the portion of the submicron scale debris across the top surface of the photonic crystal structure to fill the volume of the at least one predetermined hole determined in step (b3).

8. The method according to claim 1, wherein step (b) includes at least one of:

pushing a grain of the submicron scale debris across the top surface of the photonic crystal structure and into one of the at least one predetermined hole of the photonic crystal structure with the tip of the NSOM system;

or

aligning the tip of the NSOM system with a grain of the submicron scale debris, coupling a laser beam from a laser source of the NSOM system through the tip of the NSOM system to trap the grain of the submicron scale debris, and placing the trapped grain in one of the at least one predetermined hole of the photonic crystal structure.

9. The method according to claim 1, further comprising the step of:

c) annealing the portion of the submicron scale debris partially filling the at least one predetermined hole of the plurality of holes of the photonic crystal structure.

10. The method according to claim 9, wherein step (c) includes at least one of:

heating the photonic crystal structure to temperature greater than an annealing temperature for material of the submicron scale debris;

or

irradiating the portion of the submicron scale debris partially filling the at least one predetermined hole using a pulsed laser source of the NSOM system at an annealing fluence less than an ablation threshold fluence of the material of the submicron scale debris.

11. The method according to claim 1, further comprising the step of:

c) measuring a tuned resonance frequency of the red-tuned photonic crystal structure;

d) comparing the tuned resonance frequency to a desired resonance frequency range;

e) repeating steps (b), (c), (d), and (e) if the tuned resonance frequency is greater than the desired resonance frequency range; and

f) blue-tuning the photonic crystal structure and repeating steps (c), (d), (e), and (f) if the tuned resonance frequency is less than the desired resonance frequency.

12. A method for red-tuning the resonance frequency of a photonic crystal structure that includes a plurality of holes and a defect section, using a near-field scanning optical microscope (NSOM) system, the method comprising the steps of:

a) trapping nano-particles from a reservoir of nano-particles using the NSOM system; and

b) placing the trapped nano-particles;

in a predetermined hole of the plurality of holes of the photonic crystal structure to partially fill the predetermined hole;

or

on the defect section of the photonic crystal structure to form a hump.

13. The method according to claim 12, wherein step (a) includes the steps of:

a1) aligning a tip of the NSOM system over the reservoir of nano-particles; and

a2) coupling a laser beam from a laser source of the NSOM system through the tip of the NSOM system to trap at least one nano-particle from the reservoir of nano-particles.

14. The method according to claim 12, wherein step (b) includes the steps of:

b1) locating the predetermined hole or the defect section of the photonic crystal structure;

b2) aligning the tip of the NSOM system with the predetermined hole or the defect section of the photonic crystal structure located in step (b1) in a plane approximately parallel to the top surface; and

b3) releasing the trapped nano-particles.

15. The method according to claim 14, wherein step (b1) includes at least one of:

profiling the top surface of the photonic crystal structure using the NSOM system to locate the predetermined hole or the defect section of the photonic crystal structure;

or

imaging the top surface of the photonic crystal structure using an optical camera to locate the predetermined hole or the defect section of the photonic crystal structure.

16. The method according to claim 12, further comprising the steps of:

c) measuring an initial resonance frequency of the photonic crystal structure;

d) comparing the initial resonance frequency to a desired resonance frequency range; and

e) determining a volume of the predetermined hole to fill or the volume of the hump to form based on the comparison of step (d).

17. The method according to claim 12, further comprising the step of:

c) annealing the placed nano-particles.

18. The method according to claim 17, wherein step (c) includes at least one of:

heating the photonic crystal structure to temperature greater than an annealing temperature for material of the nano-particles;

or

irradiating the placed nano-particles using a pulsed laser source of the NSOM system at an annealing fluence less than an ablation threshold fluence of the material of nano-particles.

19. The method according to claim 12, further comprising the step of:

c) measuring a tuned resonance frequency of the red-tuned photonic crystal structure;

d) comparing the tuned resonance frequency to a desired resonance frequency range;

e) repeating steps (b), (c), (d), and (e) if the tuned resonance frequency is greater than the desired resonance frequency range; and

f) blue-tuning the photonic crystal structure and repeating steps (c), (d), (e), and (f) if the tuned resonance frequency is less than the desired resonance frequency.

20. A method for red-tuning the resonance frequency of a photonic crystal structure that includes a plurality of holes, using a laser assisted chemical vapor deposition (LACVD) system, the method comprising the steps of:

a) placing the photonic crystal structure in a deposition chamber of the LACVD system;

b) aligning a beam spot of the LACVD system to be incident on a predetermined hole of the plurality of holes of the photonic crystal structure;

c) introducing a deposition vapor into the deposition chamber of the LACVD system; and

d) coupling laser radiation of the LACVD system to the beam spot on the predetermined hole of the photonic crystal structure to induce the deposition vapor to react and deposit material at the beam spot to partially fill the predetermined hole.

21. The method according to claim 20, wherein step (b) includes the steps of:

b1) imaging a top surface of the photonic crystal structure and the beam spot of the LACVD system on the top surface using an optical camera to identify an initial location of the beam spot on the top surface of the photonic crystal structure;

b2) identifying a location of the predetermined hole of the photonic crystal structure relative to the initial position of the beam spot on the top surface of the photonic crystal structure; and

b3) aligning the beam spot of the LACVD system to be incident on the predetermined hole based on the location of the predetermined hole of the photonic crystal structure relative to the initial position of the beam spot on the top surface of the photonic crystal structure.

22. The method according to claim 20, further comprising the steps of:

e) measuring an initial resonance frequency of the photonic crystal structure;

f) comparing the initial resonance frequency to a desired resonance frequency range; and

g) determining a volume of the predetermined hole to fill based on the comparison of step (f).

23. The method according to claim 20, further comprising the step of:

e) annealing the material deposited in step (d).

24. The method according to claim 23, wherein step (d) includes at least one of:

heating the photonic crystal structure to temperature greater than an annealing temperature for the material deposited in step (d);

or

irradiating the material deposited in step (d) using laser radiation of the LACVD system at an annealing fluence less than an ablation threshold fluence of the material deposited in step (d) and greater than a deposition fluence used in step (d).

25. The method according to claim 20, further comprising the step of:

e) measuring a tuned resonance frequency of the red-tuned photonic crystal structure;

f) comparing the tuned resonance frequency to a desired resonance frequency range;

g) repeating steps (c), (d), (e), (f), and (g) if the tuned resonance frequency is greater than the desired resonance frequency range; and

h) blue-tuning the photonic crystal structure and repeating steps (e), (f), (g), and (h) if the tuned resonance frequency is less than the desired resonance frequency.

26. A method for red-tuning the resonance frequency of a photonic crystal structure that includes a defect, using a laser assisted chemical vapor deposition (LACVD) system, the method comprising the steps of:

a) placing the photonic crystal structure in a deposition chamber of the LACVD system;

b) aligning a beam spot of the LACVD system to be incident on a predetermined portion of the defect of the photonic crystal structure;

c) introducing a deposition vapor into the deposition chamber of the LACVD system; and

d) coupling laser radiation of the LACVD system to the beam spot on the predetermined portion of the defect of the photonic crystal structure to induce the deposition vapor to react and deposit material on the predetermined portion of the defect, thereby forming a hump on the defect.

27. The method according to claim 26, wherein step (b) includes the steps of:

b1) imaging a top surface of the photonic crystal structure and the beam spot of the LACVD system on the top surface using an optical camera to identify an initial location of the beam spot on the top surface of the photonic crystal structure;

b2) identifying the predetermined portion of the defect of the photonic crystal structure relative to the initial position of the beam spot on the top surface of the photonic crystal structure; and

b3) aligning the beam spot of the LACVD system to be incident on the predetermined portion of the defect based on the predetermined portion of the defect of the photonic crystal structure relative to the initial position of the beam spot on the top surface of the photonic crystal structure.

28. The method according to claim 26, further comprising the steps of:

e) measuring an initial resonance frequency of the photonic crystal structure;

f) comparing the initial resonance frequency to a desired resonance frequency range; and

g) determining a volume of material to deposit on the predetermined portion of the defect of the photonic crystal structure based on the comparison of step (f).

29. The method according to claim 26, further comprising the step of:

e) annealing the material deposited in step (d).

30. The method according to claim 29, wherein step (d) includes at least one of:

heating the photonic crystal structure to temperature greater than an annealing temperature for the material deposited in step (d);

or

irradiating the material deposited in step (d) using laser radiation of the LACVD system at an annealing fluence less than an ablation threshold fluence of the material deposited in step (d) and greater than a deposition fluence used in step (d).

31. The method according to claim 26, further comprising the step of:

e) measuring a tuned resonance frequency of the red-tuned photonic crystal structure;

f) comparing the tuned resonance frequency to a desired resonance frequency range;

g) repeating steps (c), (d), (e), (f), and (g) if the tuned resonance frequency is greater than the desired resonance frequency range; and

h) blue-tuning the photonic crystal structure and repeating steps (e), (f), (g), and (h) if the tuned resonance frequency is less than the desired resonance frequency.

32. A method for red-tuning the resonance frequency of a photonic crystal structure that includes a plurality of holes on a top surface of the photonic crystal structure, using a near-field scanning optical microscope (NSOM) system, the method comprising the steps of:

a) locating a predetermined hole of the plurality of holes on the top surface of the photonic crystal structure;

b) aligning a tip of the NSOM system at an ablation location on the top surface of the photonic crystal structure a predetermined distance from the predetermined hole; and

c) ablating material from the ablation location on the top surface of the photonic crystal structure using the NSOM system such that a portion of the ablated material is redeposited in the predetermined hole.

33. The method according to claim 32, wherein step (a) includes at least one of:

profiling the top surface of the photonic crystal structure using the NSOM system;

or

imaging the top surface of the photonic crystal structure using an optical camera.

34. The method according to claim 32, wherein step (b) includes contacting the tip of the NSOM system on the ablation location on the top surface of the photonic crystal structure.

35. The method according to claim 32, wherein step (c) includes the steps of:

c1) measuring an initial resonance frequency of the photonic crystal structure;

c2) comparing the initial resonance frequency to a desired resonance frequency range;

c3) determining a volume of the predetermined hole to fill based on the comparison of step (c2); and

c4) ablating material from the ablation location on the top surface of the photonic crystal structure using the NSOM system such that the portion of the ablated material redeposited in the predetermined hole fills the volume of the predetermined hole determined in step (c3).

36. The method according to claim 32, further comprising the step of:

d) annealing the portion of the ablated material redeposited in the predetermined hole of the plurality of holes of the photonic crystal structure.

37. The method according to claim 36, wherein step (d) includes at least one of:

heating the photonic crystal structure to temperature greater than an annealing temperature for the ablated material;

or

irradiating the portion of the ablated material redeposited in the predetermined hole using a pulsed laser source of the NSOM system at an annealing fluence less than an ablation threshold fluence of the ablated material.

38. The method according to claim 32, further comprising the step of:

d) measuring a tuned resonance frequency of the red-tuned photonic crystal structure;

e) comparing the tuned resonance frequency to a desired resonance frequency range;

f) repeating steps (b), (c), (d), (e), and (f) if the tuned resonance frequency is greater than the desired resonance frequency range; and

g) blue-tuning the photonic crystal structure and repeating steps (d), (e), (f), and (g) if the tuned resonance frequency is less than the desired resonance frequency.