Method to reduce plasma-induced charging damage

• US 20070048882A1
• Filed: 03/01/2006
• Published: 03/01/2007
• Est. Priority Date: 03/17/2000
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hoffman, Daniel, Sinha, Ashok, Zhao, Xiaoye, Ma, Shawming, Kutney, Michael, Delgadino, Gerardo, Gold, Ezra, Burns, Douglas
• Application Number:
  US11/366,301
• Publication Number:
  US 20070048882A1
• Time in Patent Office: Days
• US Class Current: 438/5
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/76807 for dual damascene structures

Abstract

In some implementations, a method is provided for inhibiting charge damage in a plasma processing chamber during a process transition from one process step to another process step, including performing a pre-transition compensation of at least one process parameter so as to inhibit charge damage from occurring during the process transition. In some implementations, a method is provided for inhibiting charge damage during a process transition from one process step to another process step, which includes changing at least one process parameter with a smooth non-linear transition. In some implementations, a method is provided which includes sequentially changing selected process parameters such that a plasma is able to stabilize after each change prior to changing a next selected process parameter.

Claims

1. A method for inhibiting charge damage on a workpiece in a plasma processing chamber during a process transition from one process step to another process step, wherein the process transition comprises changing of at least one process parameter, the method comprising performing a pre-transition compensation of at least one other process parameter so as to inhibit charge damage from occurring during the process transition.

2. The method of claim 1 wherein performing the pre-transition compensation comprises increasing a chamber pressure prior to the process transition so as to inhibit charge damage from occurring during the process transition.

3. The method of claim 2 further comprising reducing the chamber pressure for processing after the process transition.

4. The method of claim 2 wherein performing the pre-transition compensation comprises increasing a chamber pressure prior to the process transition if a source power-to-bias power ratio is greater than about 1.

5. The method of claim 1 wherein performing the pre-transition compensation comprises changing a gas chemistry in the chamber to an non-reactive gas prior to the process transition so as to inhibit charge damage from occurring during the process transition.

6. The method of claim 5 wherein introducing the non-reactive gas into the plasma processing chamber prior to the process transition comprises starting a flow of the non-reactive gas to the process chamber before the process transition at a time prior to the process transition greater than a residence time of the non-reactive gas to arrive from a gas panel to the processing chamber.

7. The method of claim 6 wherein introducing the non-reactive gas into the plasma processing chamber comprises introducing argon at least 2 seconds prior to the process transition.

8. The method of claim 5 further introducing a reactive gas after the process transition for processing the workpiece.

9. The method of claim 5 wherein performing the pre-transition compensation comprises changing a gas chemistry in the chamber to an non-reactive gas prior to the process transition if a source power-to-bias power ratio is greater than about 1.

10. The method of claim 1 wherein performing the pre-transition compensation comprises setting a source power-to-bias power ratio within a range below about 1 for the transition.

11. The method of claim 1 wherein performing the pre-transition compensation comprises initiating a bias power prior to the process transition so as to inhibit charge damage from occurring during the process transition.

12. The method of claim 11 wherein initiating the bias power comprises setting bias power to about 100 W prior to the process transition.

13. The method of claim 1 wherein performing the pre-transition compensation comprises increasing a sheath size above the workpiece by initiating application of a bias power prior to the process transition so as to inhibit charge damage from occurring during the process transition.

14. A method for inhibiting charge damage on a workpiece in a plasma processing chamber during a process transition from one process step to another process step, the method comprising changing at least one process parameter with a smooth non-linear transition so as to inhibit charge damage from occurring during the process transition.

15. The method of claim 14 wherein changing the at least one process parameter with the smooth non-linear transition comprises changing the at least one process parameter along one of:

(a) a Boltzmann curve;

or (b) a Sigmoidal Richards curve.

16. The method of claim 14 wherein changing the at least one process parameter comprises gradually changing from a first steady state to a transition state and gradually changing from the transition state to a second steady state.

17. The method of claim 14 wherein changing of the at least one process parameter with the smooth non-linear transition comprises changing at least one of:

(a) a plasma source power;

(b) a bias power;

(c) a gas flow;

(d) a chamber pressure;

or (e) a magnetic field strength.

18. The method of claim 14 wherein changing at least one process parameter with a smooth non-linear transition is performed if a source power-to-bias power ratio is greater than about 1.

19. A method for inhibiting charge damage on a workpiece in a plasma processing chamber during a process transition from one process step to another process step, the method comprising sequentially changing selected process parameters such that a plasma is able to stabilize after each change prior to changing a next selected process parameter.

20. The method of claim 19 wherein changing the plurality of process parameters comprises providing an non-reactive gas chemistry in the chamber prior to changing other process parameters so as to reduce charging damage on the workpiece during the process transition.

21. The method of claim 19 wherein changing the plurality of process parameters comprises changing a source power after increasing a chamber pressure so as to reduce charging damage on the workpiece during the process transition.

22. The method of claim 19 wherein changing the plurality of process parameters comprises changing a source power after providing an non-reactive gas chemistry in the plasma processing chamber so as to reduce charging damage on the workpiece during the process transition.

23. The method of claim 19 wherein changing the plurality of process parameters comprises changing a source power after initiating application of a bias power on the workpiece so as to reduce charging damage on the workpiece during the process transition.

24. A method for inhibiting charge damage on a workpiece in a plasma processing chamber during a process transition from one process step to another process step, the method comprising:

a) monitoring an impedance of a plasma in a steady state;

b) monitoring the impedance of the plasma during a process transition; and

c) limiting a change in the impedance of the plasma during the process transition so as to inhibit charging damage on the workpiece.

25. The method of claim 24 wherein limiting the impedance during the process transition comprises compensating at least one process parameter.

26. The method of claim 24 further comprising limiting the change in the impedance of the plasma during the process transition to less than about 2 times the value of the impedance during the steady state.

27. The method of claim 24 further comprising limiting the change in the impedance of the plasma during the process transition to less than about one-half of the value of the impedance of the plasma in the steady state.

28. The method of claim 24 further comprising:

a) limiting an increase in the impedance of the plasma during the process transition to less than about 2 times the value of the impedance of the plasma during the steady state; and

b) limiting a decrease in the impedance of the plasma during the process transition to less than about one-half of the value of the impedance of the plasma in the steady state.

29. The method of claim 24 comprising comparing the impedance of the plasma in the steady state with the impedance of the plasma in the process transition and limiting the value of the impedance of the plasma during the transition based on the steady state value of the impedance of the plasma prior to the transition.