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Transistor gate forming methods and transistor structures

  • US 20070048941A1
  • Filed: 09/01/2005
  • Published: 03/01/2007
  • Est. Priority Date: 09/01/2005
  • Status: Active Grant
First Claim
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1. A transistor gate forming method comprising:

  • forming a gate metal layer within a gate line opening extending into a semiconductive substrate; and

    forming a gate fill layer within the opening over the metal layer, the fill layer being substantially selectively etchable with respect to the metal layer.

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