METHOD FOR IDENTIFYING AND USING PROCESS WINDOW SIGNATURE PATTERNS FOR LITHOGRAPHY PROCESS CONTROL

• US 20070050749A1
• Filed: 08/24/2006
• Published: 03/01/2007
• Est. Priority Date: 08/31/2005
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Brion Technologies Incorporated (ASML Holding NV)
• Inventors: Ye, Jun, Chen, Xun, Juang, Shauh-Teh, Wiley, James, Preil, Moshe
• Granted Patent: US 7,695,876 B2
• Time in Patent Office: Days
• US Class Current: 430/30
• CPC Class Codes: G03F 1/44 Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70641 Focus

Abstract

A method for identifying process window signature patterns in a device area of a mask is disclosed. The signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process. The signature patterns enable monitoring of associated process condition parameters for signs of process drift, analyzing of the process condition parameters to determine which are limiting and affecting the chip yields, analyzing the changes in the process condition parameters to determine the corrections that should be fed back into the lithography process or forwarded to an etch process, identifying specific masks that do not transfer the intended pattern to wafers as intended, and identifying groups of masks that share common characteristics and behave in a similar manner with respect to changes in process condition parameters when transferring the pattern to the wafer.

Claims

1. A set of process window signature patterns, comprising:

a plurality of patterns in a circuit device area of a mask, wherein a collective response of the plurality of patterns to a lithography process uniquely identifies any deviation from nominal in process condition parameters of the lithography process.

2. A method for identifying process window signature patterns, comprising:

performing simulations of a lithography process, using a representation of a device area of a mask, at two or more non-nominal locations and at nominal condition in a process window to produce simulation results;

determining simulated values from the simulation results for at least one metric at the two or more non-nominal locations and at nominal condition in the process window, wherein the simulated values for the at least one metric are determined at a plurality of locations within the device area;

for each of the plurality of locations within the device area, determining a difference between simulated values for the at least one metric at the two or more non-nominal locations in the process window and the simulated value for the at least one metric at nominal condition;

identifying a number of locations within the device area where the difference for the at least one metric is above a threshold;

if the number of identified locations is greater than a predetermined number, modifying the threshold and identifying the locations within the device area where the difference for the at least one metric is above the threshold until the number of identified locations within the device area is less than the predetermined number; and

assigning patterns associated with the number of identified locations within the device area that is less than the predetermined number to be signature patterns.

3. The method of claim 2, wherein the process window is defined by at least two process condition parameters of the lithography process.

4. The method of claim 3, wherein the at least two process condition parameters are focus and exposure dose.

5. The method of claim 3, wherein the at least two process condition parameters are selected from the group consisting of focus, exposure dose, numerical aperture, film stacks, lens aberrations, coherence, and illumination shifts.

6. The method of claim 2, further comprising:

obtaining measured values of the at least one metric for the signature patterns, the measured values being obtained from measurements of the signature patterns printed on a wafer processed by the lithography process using the mask;

finding a location in the process window where a total difference measure between the measured values of the at least one metric for all of the signature patterns and the simulated values of the at least one metric for all of the signature patterns at the location in the process window is minimized; and

determining a change between the location in the process window where the total difference measure is minimized and nominal condition to determine a change in the lithography process.

7. A method for monitoring changes in a lithography process, comprising:

performing simulations of a lithography process, using a representation of a device area of a mask, at two or more non-nominal locations and at nominal condition in a process window to produce simulation results;

determining simulated values from the simulation results for at least one metric at the two or more non-nominal locations and at nominal condition in the process window, wherein the simulated values for the at least one metric are determined at a plurality of locations within the device area;

for each of the plurality of locations within the device area, determining a difference between simulated values for the at least one metric at the two or more non-nominal locations in the process window and the simulated value for the at least one metric at nominal condition;

identifying a number of locations within the device area where the difference for the at least one metric is above a threshold;

if the number of locations is greater than a predetermined number, modifying the threshold and identifying the locations within the device area where the difference for the at least one metric is above the threshold until the number of identified locations within the device area is less than the predetermined number;

assigning patterns associated with the number of identified locations within the device area that is less than the predetermined number to be signature patterns;

obtaining measured values of the at least one metric for the signature patterns, the measured values being obtained from measurements of the signature patterns printed on a wafer processed by the lithography process using the mask;

finding a location in the process window where a total difference measure between the measured values of the at least one metric for all of the signature patterns and the simulated values of the at least one metric for all of the signature patterns at the location in the process window is minimized; and

determining a change between the location in the process window where the total difference measure is minimized and nominal condition to determine a change in the lithography process.

8. The method of claim 7, further comprising:

correlating the change in the lithography process with a wafer chip yield map using statistical analysis.

9. The method of claim 7, further comprising:

inputting the change in the lithography process to a lithography process control system.

10. The method of claim 7, further comprising:

providing the change in the lithography process to a model-based advanced process control system.

11. The method of claim 7, wherein the process window is defined by at least two process condition parameters of the lithography process.

12. The method of claim 11, wherein the at least two process condition parameters are focus and exposure dose.

13. The method of claim 11, wherein the at least two process condition parameters are selected from the group consisting of focus, exposure dose, numerical aperture, film stacks, lens aberrations, and illumination shifts.

14. A method for identifying deviations from nominal values of process condition parameters of a lithography process, comprising:

processing a wafer using a lithography process and a mask;

measuring a metric associated with each of a plurality of signature patterns of a device area of the mask on the processed wafer, producing measured values of the metrics, wherein the plurality of signature patterns collectively provide a unique response to changes in a set of process condition parameters to the lithography process;

simulating the lithography process using a representation of the device area of the mask at a plurality of values of the set of process condition parameters to produce simulated results;

determining simulated values for each metric associated with each of the plurality of signature patterns of the device area of the mask using the simulated results;

identifying a location in the process window such that a total difference measure between the measured values for the metrics and the simulated values for the metrics is minimized; and

determining a deviation between the location in the process window where the total difference measure is minimized and nominal condition.

15. The method of claim 14, further comprising:

correlating the deviation between the location in the process window where the total difference measure is minimized and nominal condition with a wafer chip yield map using statistical analysis.

16. The method of claim 14, wherein the deviation between the location in the process where the total difference measure is minimized and nominal condition is used to correct the lithography process.

17. The method of claim 14, further comprising:

providing the deviation between the location in the process window where the total difference measure is minimized and nominal condition to a model-based advanced process control system.

18. The method of claim 14, wherein the deviation between the location in the process where the total difference measure is minimized and nominal condition is used to optimize an etch process for the processed wafer.

19. The method of claim 14, wherein the set of process condition parameters include focus and exposure dose.

20. The method of claim 14, wherein the set of process condition parameters is selected from the group consisting of focus, exposure dose, numerical aperture, film stacks, lens aberrations, coherence, and illumination shifts.

21. A computer-readable medium including instructions for performing:

performing simulations of a lithography process, using a representation of a device area of a mask, at two or more non-nominal locations and at nominal condition in a process window to produce simulation results;

determining simulated values from the simulation results for at least one metric at the two or more non-nominal locations and at nominal condition in the process window, wherein the simulated values for the at least one metric are determined at a plurality of locations within the device area;

for each of the plurality of locations within the device area, determining a difference between simulated values for the at least one metric at the two or more non-nominal locations in the process window and the simulated value for the at least one metric at nominal condition;

identifying a number of locations within the device area where the difference for the at least one metric is above a threshold;

if the number of locations is greater than a predetermined number, modifying the threshold and identifying the locations within the device area where the difference for the at least one metric is above the threshold until the number of identified locations within the device area is less than the predetermined number;

assigning patterns associated with the number of identified locations within the device area that is less than the predetermined number to be signature patterns;

storing measured values of the at least one metric for the signature patterns, the measured values being obtained from measurements of the signature patterns printed on a wafer processed by the lithography process using the mask;

finding a location in the process window where a total difference measure between the measured values of the at least one metric for all of the signature patterns and the simulated values of the at least one metric for all of the signature patterns at the location in the process window is minimized; and

determining a change between the location in the process window where the total difference measure is minimized and nominal condition to determine a change in the lithography process.

22. The computer-readable medium of claim 21, further comprising:

providing the change in the lithography process to an exposure tool that performs the lithography process.

23. The computer-readable medium of claim 21, further comprising:

providing the change in the lithography process to an etch process.

24. The computer-readable medium of claim 21, further comprising:

correlating the change in the lithography process with a wafer chip yield map using statistical analysis.

25. The computer-readable medium of claim 21, further comprising:

providing the change in the lithography process to a model-based advanced process control system.

26. The computer-readable medium of claim 21, wherein the set of process condition parameters include focus and exposure dose.

27. The computer-readable medium of claim 21, wherein the set of process condition parameters is selected from the group consisting of focus, exposure dose, numerical aperture, film stacks, lens aberrations, coherence, and illumination shifts.