Device and method for determining the physical condition of an animal

• US 20070051940A1
• Filed: 01/14/2004
• Published: 03/08/2007
• Est. Priority Date: 01/29/2003
• Status: Abandoned Application

• Current Assignee: Andreas Ullmann, Axel Gerlt, Walter Fix, Wolfgang Clemens
• Original Assignee: Andreas Ullmann, Axel Gerlt, Walter Fix, Wolfgang Clemens
• Inventors: Clemens, Wolfgang, Fix, Walter, Ullmann, Andreas, Gerlt, Axel
• Application Number:
  US10/543,561
• Publication Number:
  US 20070051940A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10K 10/468 characterised by the gate dielectrics
• CPC Class Codes: H10K 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
• CPC Class Codes: H10K 19/80 Interconnections, e.g. terminals

Abstract

Organic memory unit and driver circuit therefor The invention relates to organic memory units and driver circuits therefor. The organic memory units have a layer of bistably switchable material or comprise a circuit in which two OFETs are connected in series and one OFET is connected in parallel with a capacitor on the low potential side thereof such that the capacitor is connected in parallel with the discharge OFET and is charged by the second OFET.

Claims

1. An organic-based memory unit comprising,

first and second conductors;

and

at least one organic bistably switchable functional layer of which a property including at least one of dielectric constant electrical conductivity and magnetic permeability is bistably switchable, the functional layer being ohmically coupled to and between the first and second conductors.

2. A memory unit as defined in claim 1, further including an organic field effect transistor including said first and second conductors and an insulator coupled to the first and second conductors wherein said bistably switchable organic functional layer is integrated into said organic field effect transistor in addition to the insulator layer.

3. A memory unit as defined in claim 1, wherein said bistably switchable organic functional layer has an electrical insulating property further including an organic field effect transistor including said first and second conductors wherein said functional layer forms an insulator layer in said transistor.

4. A memory unit as defined in claim 2 or claim 3, wherein the property of said bistably adjustable functional layer is said dielectric constant and wherein the dielectric constant is arranged to changes in value in response to the application of an electric potentials to the functional layer.

5. An organic capacitance memory cell, comprising:

a circuit arrangement including a capacitor; and

two OFETs connected in series, the two OFETs forming respective charge and discharge OFETs with respect to the capacitor;

the capacitor being i connected in parallel with the discharge OFET.

6. The organic capacitance memory cell of claim 5 wherein the OFETs are coupled to a supply voltage.

7. The organic capacitance memory cell of claim 5 wherein the two OFETs are connected to each other at a junction, the capacitor being coupled to the junction, further including an output terminal coupled to the junction.

8. The organic capacitance memory cell of claim 5 wherein the two OFETs each have a gate electrode, further including an input terminal connected to each said gate electrode for selectively receiving an electrical pulse input signal for either charging or discharging the capacitor.