Etch masks based on template-assembled nanoclusters
First Claim
1. A method of forming a pattern on or in a substrate surface comprising or including the steps of:
- a) Providing a substrate;
b) modifying the substrate surface to provide a topographical feature, or identifying a topographical feature on the substrate surface;
c) preparing a plurality of particles of size between about 0.5 nm and 100 microns;
d) deposition of a plurality of the particles on the substrate surface in, or in the general vicinity of, the topographical feature;
e) formation of an arrangement of particles via accumulation of the particles, into or against or proximal to, the topographical feature;
f) removing at least a portion of the substrate by etching, the arrangement of particles acting as an etch mask.
1 Assignment
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Accused Products
Abstract
Nanoscale or mesoscale structures are fabricated on the surface of a substrate (e.g. silicon) by the aggregation of atomic clusters (e.g. antimony or bismuth) into V-grooves. These structures, preferably in the form of nanowires, are used as etching masks for the subsequent etching of the substrate. In an embodiment the V-grooves are metallised (e.g. with titanium or gold) prior to the deposition of the clusters. In this case the use of the nanostructures (e.g. antimony or bismuth) as an etching mask results in the formation of nanostructures of the underlying metal (e.g. titanium or gold). In this way the dimensions of the nanowires are transferred into the underlying metal film and the method allows fabrication of nanowires from materials (e.g. titanium or gold) that cannot be deposited as clusters.
30 Citations
46 Claims
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1. A method of forming a pattern on or in a substrate surface comprising or including the steps of:
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a) Providing a substrate;
b) modifying the substrate surface to provide a topographical feature, or identifying a topographical feature on the substrate surface;
c) preparing a plurality of particles of size between about 0.5 nm and 100 microns;
d) deposition of a plurality of the particles on the substrate surface in, or in the general vicinity of, the topographical feature;
e) formation of an arrangement of particles via accumulation of the particles, into or against or proximal to, the topographical feature;
f) removing at least a portion of the substrate by etching, the arrangement of particles acting as an etch mask. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 21, 22, 23, 24, 25, 26, 27, 28, 30, 31, 32, 33, 34, 35, 36, 37, 38, 40)
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- 16. A method as claimed in 15 wherein the substrate comprises an insulating or semiconductor material coated with one or more metallic and/or semi-conducting layer(s), the metallic and/or semiconducting layer(s) being crystalline, nano- or micro-crystalline, or amorphous.
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39. (canceled)
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41. A method of fabricating a device including or requiring a conduction path between two contacts formed on a substrate surface, comprising or including the steps of:
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A. preparing a conducting pattern between two contacts according to a method comprising or including the steps of;
i. providing a semiconducting or insulating substrate;
ii. modifying the substrate surface to provide a topographical feature, or identifying a topographical feature on the substrate surface;
iii. preparing a plurality of clusters;
iv. deposition of a plurality of the clusters on the substrate surface in, or in the general vicinity of, the topographical feature;
v. formation of an arrangement of clusters via accumulation, of the clusters, into or against or proximal to, the topographical feature;
vi. subjecting the substrate and arrangement to an etching process, the arrangement of clusters acting as an etch mask wherein either prior to or after step ii. one or more metallic or semiconducting layers are deposited on the substrate surface, such that the etching process removes substantially all of the one or more metallic or semiconducting layers other than the masked portion, and wherein the process also includes, at any stage, a step of providing electrical contacts on the substrate so that once etching is complete a conducting pattern exists between the contacts; and
B. incorporating the contacts and wire into the device. - View Dependent Claims (42, 43, 44, 45)
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46. (canceled)
Specification