×

Metal contact systems for semiconductor-based pressure sensors exposed to harsh chemical and thermal environments

  • US 20070052047A1
  • Filed: 09/01/2005
  • Published: 03/08/2007
  • Est. Priority Date: 09/01/2005
  • Status: Abandoned Application
First Claim
Patent Images

1. A metal electrical contact system for a piezoresistive pressure sensor for use in harsh chemical and thermal environments comprising:

  • a semiconductor substrate, an electrically conductive impurity doped region formed in a portion of the substrate, a passivation layer formed on the said surface of the substrate including the impurity doped region, an opening formed in the passivation layer exposing a portion of the impurity doped region, an ohmic contact formed in a portion of the impurity doped region aligned with the opening, and a layer of one of tantalum and a tantalum alloy formed in the opening on the ohmic contact.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×