Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
First Claim
1. A method of removing photoresist and post etch residue from a semiconductor substrate having a layer of low-k dielectric material comprising:
- introducing a semiconductor substrate having a layer of low-k dielectric material having photoresist and post etch residue thereon into a downstream reaction chamber;
generating plasma comprising reactive species in an upstream applicator, wherein the reactive species comprise atomic hydrogen and atomic oxygen, wherein atomic oxygen passivates applicator surfaces exposed to the plasma, wherein the plasma is generated from a gas mixture comprising oxygen, hydrogen, and inert carrier gas, and wherein the volume ratio of hydrogen to oxygen is greater than 2;
1; and
introducing the reactive species into the downstream reaction chamber, wherein atomic hydrogen removes photoresist and post etch residue from the low-k dielectric material.
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Accused Products
Abstract
Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.
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Citations
20 Claims
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1. A method of removing photoresist and post etch residue from a semiconductor substrate having a layer of low-k dielectric material comprising:
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introducing a semiconductor substrate having a layer of low-k dielectric material having photoresist and post etch residue thereon into a downstream reaction chamber;
generating plasma comprising reactive species in an upstream applicator, wherein the reactive species comprise atomic hydrogen and atomic oxygen, wherein atomic oxygen passivates applicator surfaces exposed to the plasma, wherein the plasma is generated from a gas mixture comprising oxygen, hydrogen, and inert carrier gas, and wherein the volume ratio of hydrogen to oxygen is greater than 2;
1; and
introducing the reactive species into the downstream reaction chamber, wherein atomic hydrogen removes photoresist and post etch residue from the low-k dielectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A gas mixture for removing photoresist and post etch residue from a semiconductor substrate having a layer of low-k dielectric material comprising:
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hydrogen and oxygen in a volume ratio of greater than 2;
1; and
inert carrier gas,wherein plasma generated from the gas mixture comprises atomic hydrogen and atomic oxygen, wherein atomic oxygen passivates surfaces exposed to the plasma, and wherein atomic hydrogen removes photoresist and post etch residue from the low-k dielectric material. - View Dependent Claims (17, 18, 19, 20)
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Specification