Large-area magnetron sputtering chamber with individually controlled sputtering zones
First Claim
1. A plasma processing chamber assembly for depositing a layer on a rectangular large area substrate that has a processing surface surface area of at least 19,500 cm2, comprising:
- a substrate support having a substrate receiving surface that has a central region and an edge region, wherein the substrate receiving surface is in contact with a processing region;
a target assembly comprising;
a first target section having a processing surface this is in contact with the processing region and is positioned adjacent to the central region of the substrate receiving surface; and
a second target section having a processing surface this is in contact with the processing region and is positioned adjacent to the edge region of the substrate receiving surface; and
a power source assembly that is adapted to electrically bias the first target section at a first cathodic bias and the second target section at a second cathodic bias, wherein the first cathodic bias and the second cathodic bias are formed relative to a anodic surface positioned in the processing region.
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Accused Products
Abstract
The present invention generally provides an apparatus for processing a surface of a substrate in a physical vapor deposition (PVD) chamber that has a sputtering target that has separately biasable sections, regions or zones to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one or more DC or RF power sources. In one aspect, each of the target sections of the multizone target assembly are biased at a different cathodic biases by use of one power source and one or more resistive, capacitive and/or inductive elements. In one aspect, the processing chamber contains a multizone target assembly that has one or more ports that are adapted deliver a processing gas to the processing region of the PVD chamber. In one aspect, the processing chamber contains a multizone target assembly that has one or more magnetron assemblies positioned adjacent to one or more of the target sections.
426 Citations
20 Claims
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1. A plasma processing chamber assembly for depositing a layer on a rectangular large area substrate that has a processing surface surface area of at least 19,500 cm2, comprising:
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a substrate support having a substrate receiving surface that has a central region and an edge region, wherein the substrate receiving surface is in contact with a processing region;
a target assembly comprising;
a first target section having a processing surface this is in contact with the processing region and is positioned adjacent to the central region of the substrate receiving surface; and
a second target section having a processing surface this is in contact with the processing region and is positioned adjacent to the edge region of the substrate receiving surface; and
a power source assembly that is adapted to electrically bias the first target section at a first cathodic bias and the second target section at a second cathodic bias, wherein the first cathodic bias and the second cathodic bias are formed relative to a anodic surface positioned in the processing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A physical vapor deposition chamber assembly for depositing a layer on a large area substrate comprising:
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a target assembly comprising;
one or more electrically insulating plates;
two or more target sections that each have a first surface that is in contact with a processing region and a second surface that is in thermal contact with the one or more electrically insulating plates; and
one or more gas ports that are in fluid communication with a gas source and the processing region, wherein at least one of the one or more gas ports is formed in at least one of the one or more electrically insulating plates;
a plurality of power sources, each of the power sources coupled to at least one of the two or more target sections; and
a substrate support positioned inside the physical vapor deposition processing chamber and having a substrate receiving surface, wherein a surface of a substrate positioned on the substrate receiving surface can be positioned to contact the processing region.
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- 10. The physical vapor deposition chamber assembly of claim 10, wherein the one or more gas ports are adapted to deliver a gas between two of the two or more target sections or through a passage formed in at least one of the two or more target sections.
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13. A physical vapor deposition chamber assembly for depositing a layer on a large area substrate comprising:
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a target assembly comprising;
one or more electrically insulating plates; and
a first target section that has a first surface that is in contact with a processing region and a second surface that is in thermal contact with the one or more electrically insulating plates, wherein a first target section comprises a plurality of plates that are in electrical communication with each other; and
a second target section that has a first surface that is in contact with a processing region and a second surface that is in thermal contact with the one or more electrically insulating plates, wherein a second target section comprises a plurality of plates that are in electrical communication with each other;
a power source assembly that is adapted to electrically bias the first target section at a first cathodic bias and the second target section at a second cathodic bias, wherein the first cathodic bias and the second cathodic bias are formed relative to a anodic surface positioned in the processing region; and
a substrate support positioned inside the plasma processing chamber and having a substrate receiving surface, wherein a surface of a substrate positioned on the substrate receiving surface is in contact with the processing region. - View Dependent Claims (14)
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15. A plasma processing chamber assembly for depositing a layer on a large area substrate comprising:
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a substrate support having a substrate receiving surface that has a central region and an edge region, wherein the substrate receiving surface is in contact with a processing region;
a target assembly comprising;
a first target section having a processing surface this is in contact with the processing region and is positioned adjacent to the central region of the substrate receiving surface; and
a second target section having a processing surface this is in contact with the processing region and is positioned adjacent to the edge region of the substrate receiving surface;
a power source assembly that is adapted to electrically bias the first target section at a first cathodic bias and the second target section at a second cathodic bias, wherein the first cathodic bias and the second cathodic bias are formed relative to an anodic surface positioned in the processing region; and
a magnetron assembly having one or more magnets that are positioned proximate to the first target section, wherein the one or more magnets are magnetically coupled to the processing region adjacent to the processing surface of the first target section. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification