Transparent thin film transistor (TFT) and its method of manufacture

• US 20070057261A1
• Filed: 08/31/2006
• Published: 03/15/2007
• Est. Priority Date: 09/14/2005
• Status: Abandoned Application

• Current Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Shin, Hyun, Mo, Yeon, Jeong, Jae
• Application Number:
  US11/513,090
• Publication Number:
  US 20070057261A1
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A transparent thin film transistor (TFT) and its method of manufacture includes: a substrate, a transparent semiconductor layer formed by coating the substrate with an oxide, a nitride, or a carbide to pattern the material, a gate insulating layer formed on the transparent semiconductor layer, a gate electrode formed on the gate insulating layer to correspond to the transparent semiconductor layer, an interlayer insulating layer formed on the gate electrode, and source and drain electrodes electrically connected to the transparent semiconductor layer through contact holes formed in the interlayer insulating layer and the gate insulating layer.

Claims

1. A transparent Thin Film Transistor (TFT), comprising:

a substrate;

a transparent semiconductor layer arranged on the substrate, the transparent semiconductor layer including one of an oxide, a nitride, or a carbide patterned on the substrate;

a gate insulating layer arranged on the transparent semiconductor layer;

a gate electrode arranged on the gate insulating layer to correspond to the transparent semiconductor layer;

an interlayer insulating layer arranged on the gate electrode; and

source and drain electrodes electrically connected to the transparent semiconductor layer through contact holes arranged in the interlayer insulating layer and the gate insulating layer.

2. The transparent TFT as claimed in claim 1, wherein the transparent semiconductor layer comprises a wide band gap semiconductor material having a band gap greater than 3.0 eV.

3. The transparent TFT as claimed in claim 2, wherein the transparent semiconductor layer comprises a semiconductor material selected from a group consisting of ZnO, ZnSnO, CdSnO, GaSnO, TlSnO, InGaZnO, CuAlO, SrCuO, and LaCuOS.

4. The transparent TFT as claimed in claim 2, wherein the transparent semiconductor layer comprises a semiconductor material selected from a group consisting of GaN, InGaN, AlGaN, and InGaAlN.

5. The transparent TFT as claimed in claim 2, wherein the transparent semiconductor layer comprises a semiconductor material selected from a group consisting of SiC and diamond.

6. The transparent TFT as claimed in claim 1, wherein the semiconductor layer has a thickness in a range of 300 Å

to 700 Å

.

7. A transparent Thin Film Transistor (TFT), comprising:

a substrate;

a gate electrode arranged on the substrate;

a gate insulating layer arranged on the gate electrode and the substrate;

a transparent semiconductor layer arranged on the gate insulating layer, the transparent semiconductor layer including one of an oxide, a nitride, or a carbide patterned on the gate insulating layer; and

source and drain electrodes arranged on the transparent semiconductor layer to expose a region of the transparent semiconductor layer.

8. The transparent TFT as claimed in claim 7, wherein the transparent semiconductor layer comprises a wide band gap semiconductor material having a band gap greater than 3.0 eV.

9. The transparent TFT as claimed in claim 8, wherein the transparent semiconductor layer comprises a semiconductor material selected from a group consisting of ZnO, ZnSnO, CdSnO, GaSnO, TlSnO, InGaZnO, CuAlO, SrCuO, and LaCuOS.

10. The transparent TFT as claimed in claim 8, wherein the transparent semiconductor layer comprises a semiconductor material selected from a group consisting of GaN, InGaN, AlGaN, and InGaAlN.

11. The transparent TFT as claimed in claim 8, wherein the transparent semiconductor layer comprises a semiconductor material selected from a group consisting of SiC and diamond.

12. The transparent TFT as claimed in claim 7, wherein the transparent semiconductor layer has a thickness in a range of 300 Å

to 700 Å

.

13. A method of manufacturing a transparent TFT, the method comprising:

coating a substrate with an oxide, a nitride, or a carbide to form a transparent semiconductor layer;

forming a gate insulating layer on the transparent semiconductor layer;

forming a gate electrode on the gate insulating layer to correspond to the transparent semiconductor layer;

forming an interlayer insulating layer on the gate electrode; and

forming contact holes that pass through the interlayer insulating layer and the gate insulating layer and depositing a transparent electrode to form source and drain electrodes.

14. The method as claimed in claim 13, wherein forming the transparent semiconductor layer comprises one of:

a Pulse Laser Deposition (PLD) method, an Atomic Layer Deposition (ALD) method, a Chemical Vapor Deposition (CVD) method, a sputtering method, and a Molecular Beam Epitaxy (MBE) method.

15. A method of manufacturing a transparent TFT, the method comprising:

forming a gate electrode patterned on a substrate;

forming a gate insulating layer on the gate electrode;

coating the gate insulating layer with an oxide, a nitride, or a carbide to form a transparent semiconductor layer; and

forming source and drain electrodes on the transparent semiconductor layer.

16. The method as claimed in 15, wherein forming the transparent semiconductor layer comprises one of:

a Pulse Laser Deposition (PLD) method, an Atomic Layer Deposition (ALD) method, a Chemical Vapor Deposition (CVD) method, a sputtering method, and a Molecular Beam Epitaxy (MBE) method.