Interconnects for semiconductor light emitting devices
First Claim
1. A method comprising:
- providing a semiconductor light emitting device comprising;
a light emitting layer disposed between an n-type region and a p-type region;
contacts electrically connected to the n-type region and the p-type region; and
a first metal layer formed on one of the contacts;
providing a mount comprising;
a second metal layer formed on the mount; and
a third metal layer plated over the second metal layer; and
physically connecting the semiconductor light emitting device to the mount by causing interdiffusion of the first, second, and third metal layers;
wherein the third metal layer has a lateral extent of at least 20% of an area of the semiconductor light emitting device.
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Accused Products
Abstract
A semiconductor light emitting device including a light emitting layer disposed between an n-type region and a p-type region and contacts electrically connected to the n-type region and the p-type region is connected to a mount. A metal layer arbitrarily patterned to cover at least 20% of the area of the semiconductor light emitting device is plated on either a metal layer formed on the mount or a metal layer formed on one of the contacts. The plated metal layer may replace other known interconnecting techniques such as stud bumps. The semiconductor light emitting device is physically connected to the mount by causing interdiffusion between the contact surfaces of the metal layers. In some embodiments, a layer of solder is formed over the plated metal layer, and then the semiconductor light emitting device is physically connected to the mount by heating the solder.
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Citations
35 Claims
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1. A method comprising:
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providing a semiconductor light emitting device comprising;
a light emitting layer disposed between an n-type region and a p-type region;
contacts electrically connected to the n-type region and the p-type region; and
a first metal layer formed on one of the contacts;
providing a mount comprising;
a second metal layer formed on the mount; and
a third metal layer plated over the second metal layer; and
physically connecting the semiconductor light emitting device to the mount by causing interdiffusion of the first, second, and third metal layers;
wherein the third metal layer has a lateral extent of at least 20% of an area of the semiconductor light emitting device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method comprising:
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providing a semiconductor light emitting device comprising;
a light emitting layer disposed between an n-type region and a p-type region; and
contacts electrically connected to the n-type region and the p-type region;
forming a first metal layer on one of the contacts;
plating a second metal layer on the first metal layer;
providing a mount comprising a third metal layer formed on the mount; and
physically connecting the semiconductor light emitting device to the mount by causing interdiffusion of the first, second, and third metal layers;
wherein the second metal layer has a lateral extent of at least 20% of an area of the semiconductor light emitting device. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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21. A method comprising:
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providing a semiconductor light emitting device comprising;
a light emitting layer disposed between an n-type region and a p-type region; and
contacts electrically connected to the n-type region and the p-type region;
forming a first metal layer formed on one of the contacts;
plating a second metal layer over the first metal layer;
providing a mount;
forming a solder layer over the second metal layer; and
physically connecting the semiconductor light emitting device to the mount by heating the solder layer. - View Dependent Claims (22, 23, 24)
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25. A method comprising:
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providing a semiconductor light emitting device comprising;
a light emitting layer disposed between an n-type region and a p-type region; and
contacts electrically connected to the n-type region and the p-type region;
providing a mount comprising;
a first metal layer formed on the mount;
a second metal layer plated over the first metal layer;
forming a solder layer over the second metal layer; and
physically connecting the semiconductor light emitting device to the mount by heating the solder layer. - View Dependent Claims (26, 27, 28)
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29. A structure comprising a semiconductor light emitting device connected to a mount by at least one interconnect, wherein:
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a total lateral extent of all interconnects is at least 20% of an area of the semiconductor light emitting device; and
the interconnect is one of Au and Cu. - View Dependent Claims (30, 31, 32, 33, 34, 35)
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Specification