Diode having vertical structure and method of manufacturing the same
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Abstract
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
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Citations
91 Claims
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1-63. -63. (canceled)
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64. A light emitting device, comprising:
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a plurality of GaN layer including active layer, having first and second surfaces;
a conductive layer on the first surface of the GaN layer, configured to reflect light from the active layer;
an electrode on the second surface of the GaN layer. - View Dependent Claims (65, 66, 67, 68, 69, 70, 71, 72, 73)
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74. A light emitting device, comprising:
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a first GaN layer of a first conductivity;
an active layer on the first GaN layer;
a second GaN layer of a second conductivity on the active layer;
a conductive layer on the at least one of the GaN layer, configured to reflect light from the active layer. - View Dependent Claims (75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90)
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91. A diode, comprising:
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a conductive layer;
an n-GaN layer on the conductive layer;
an active layer on the n-GaN layer;
a p-GaN layer on the active layer; and
a p-electrode on the p-GaN layer;
wherein the conductive layer is an n-electrode and a reflective layer to reflect light from the active layer.
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Specification