Lithographic apparatus, programmable patterning structure, device manufacturing method, and device manufactured thereby

• US 20070058145A1
• Filed: 11/13/2006
• Published: 03/15/2007
• Est. Priority Date: 11/27/2002
• Status: Abandoned Application

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Bleeker, Arno
• Application Number:
  US11/595,968
• Publication Number:
  US 20070058145A1
• Time in Patent Office: Days
• US Class Current: 355/18
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: G03F 7/70283 Mask effects on the imaging process
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Abstract

Pixel element for a programmable patterning structure (e.g. a spatial light modulator) which can simultaneously modulate both phase and amplitude. Use of such a programmable patterning structure with lithographic projection apparatus is also described.

Claims

1-28. -28. (canceled)

29. A method of forming a patterned beam comprising:

patterning a beam of radiation in accordance with a configuration of a plurality of pixel elements, the pixel elements comprising a solid state electro-optical material;

applying a voltage to vary a birefringence of the solid state electro-optical material;

modulating an amplitude of radiation that is incident on the pixel elements; and

altering a configuration of the plurality of pixel elements.

30. A method of forming a patterned beam comprising:

patterning a beam of radiation in accordance with a configuration of a plurality of pixel elements, the pixel elements comprising a solid state electro-optical material;

applying a voltage to vary a birefringence of the solid state electro-optical material;

modulating a phase of radiation that is incident on the pixel elements; and

altering a configuration of the plurality of pixel elements.

31. A programmable patterning structure comprising:

a plurality of pixel elements, at least a portion of the pixel elements each comprising a layer of solid state electro-optical material having a birefringence that varies according to an applied voltage;

at least one electrode configured to apply a voltage to the layer in order to vary the birefringence of the electro-optical material; and

wherein the pixel elements are configured to independently modulate an amplitude and a phase of radiation that is incident thereon.