Analysis method, exposure method, and device manufacturing method

• US 20070058148A1
• Filed: 09/08/2006
• Published: 03/15/2007
• Est. Priority Date: 09/09/2005
• Status: Active Grant

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Nakano, Katsushi
• Granted Patent: US 8,111,374 B2
• Time in Patent Office: Days
• US Class Current: 355/53
• CPC Class Codes: G03B 27/42 for automatic sequential copying of the same original G03B27/34, G03B27/53 take precedence

Abstract

An analysis method includes a developing process (SA60), which develops the substrate, a first measuring process (SA50), which measures the abnormalities of the pre-development substrate, a second measuring process (SA70), which measures the abnormalities of the post-development substrate, and an analyzing process (SA80), which analyzes the exposure defects of a substrate exposed via a liquid based on the measurements results of the first measuring process (SA50) and the measurement results of the second measuring process (SA70).

Claims

1. An analysis method for analyzing an exposure defect of a substrate exposed via a liquid, the method comprising:

a developing process, which develops the substrate;

a first measuring process, which measures a abnormality of the pre-development substrate;

a second measuring process, which measures a abnormality of the post-development substrate, and

an analyzing process, which analyzes an exposure defect of the substrate exposed via the liquid based on a measurement result of the first measuring process and a measurement result of the second measuring process.

2. An analysis method according to claim 1, wherein the exposure defect includes a pattern defect formed on the substrate by the exposure.

3. An analysis method according to claim 1, wherein in the analyzing process, a cause of the exposure defect is identified.

4. An analysis method according to claim 3, wherein

a prescribed film is formed on a surface of the substrate, and

in the analyzing process, a determination is made as to whether the cause of the exposure defect relates to a abnormality of the film.

5. An analysis method according to claim 4, wherein the film includes a protective film that protects a film of a photosensitive material formed on the substrate from the liquid.

6. An analysis method according to claim 4, wherein the abnormality of the film includes at least one of a status in which liquid has soaked into the film and a status in which foreign matter has adhered to the film.

7. An analysis method according to claim 3, wherein, in the analyzing process, a determination is made as to whether the cause of the exposure defect relates to foreign matter in the liquid.

8. An analysis method according to claim 7;

wherein the foreign matter includes bubbles.

9. An exposure method, comprising:

exposing a substrate via a liquid; and

analyzing a status of the substrate by means of an analysis method according to claim 1.

10. An exposure method according to claim 9, further comprising a process that sets the exposure conditions based on the analysis results.

12. A device manufacturing method that uses an exposure method according to claim 9.

11. An exposure method that exposes a substrate via a liquid, the method comprising:

obtaining a relationship between a receding contact angle of the liquid on a film that forms the uppermost layer of the substrate prior to exposure of the substrate and a defect level of the post-exposure substrate.