PLASMA CVD PROCESS FOR MANUFACTURING MULTILAYER ANTI-REFLECTION COATINGS

• US 20070059942A1
• Filed: 09/09/2005
• Published: 03/15/2007
• Est. Priority Date: 09/09/2005
• Status: Abandoned Application

• Current Assignee: CHI LIN Technology Company Limited (CHI MEI Optoelectronics Corporation)
• Original Assignee: CHI LIN Technology Company Limited (CHI MEI Optoelectronics Corporation)
• Inventors: Tsai, Shen Yin, Hu, Chen Ze
• Application Number:
  US11/162,425
• Publication Number:
  US 20070059942A1
• Time in Patent Office: Days
• US Class Current: 438/763
• CPC Class Codes: C23C 16/45523 Pulsed gas flow or change of composition over time
• CPC Class Codes: G02B 1/115 Multilayers

Abstract

A plasma chemical vapor deposition (CVD) process for the production of a multilayer anti-reflection coating on substrates (especially on substrates with curved or uneven surface) is disclosed. The CVD process utilizes free radical plasma to form the multilayer anti-reflection coating in order to achieve necessary coating thickness uniformity.

Claims

1. A process for manufacturing an anti-reflection coating of a predetermined thickness and uniformity on a substrate surface, the anti-reflection coating including at least a first and a second layer with different refractive index, the process comprising the steps of:

placing the substrate in a reaction chamber;

introducing a first reactive gas mixture into the reaction chamber;

generating a first free radical plasma within the reaction chamber by activating the first reactive gas mixture thereby forming the first layer on the substrate;

introducing a second reactive gas mixture into the reaction chamber; and

generating a second free radical plasma within the reaction chamber by activating the second reactive gas mixture thereby forming the second layer on the substrate.

2. The process as claimed in claim 1, wherein the first reactive gas mixture comprises gaseous oxygen or water vapor as well as a silicon-source precursor and the refractive index of the first layer is proportional to the ratio of the gaseous oxygen or water vapor to the silicon-source precursor in the first reactive gas mixture.

3. The process as claimed in claim 2, wherein the second reactive gas mixture comprises the gaseous oxygen or water vapor as well as the silicon-source precursor, and the ratio of the gaseous oxygen or water vapor to the silicon-source precursor in the second reactive gas mixture is different from that in the first reactive gas mixture.

4. The process as claimed in claim 2, wherein the second reactive gas mixture comprises gaseous water and a titanium-source precursor and the refractive index of the second layer is proportional to the ratio of the gaseous water to the titanium-source precursor in the second reactive gas mixture.

5. The process as claimed in claim 2, wherein the second reactive gas mixture comprises gaseous water and a tin-source precursor and the refractive index of the second layer is proportional to the ratio of the gaseous water to the tin-source precursor in the second reactive gas mixture.

6. The process as claimed in claim 1, wherein the substrate surface is a curved surface.

7. The process as claimed in claim 1, wherein the substrate surface has a plurality of concave or convex portions formed thereon.

8. The process as claimed in claim 7, wherein each of the concave or convex portions has a triangular cross section.

9. The process as claimed in claim 1, further comprising the step of providing nanoscale surface roughness on the surface of the anti-reflection coating.

10. The process as claimed in claim 9, wherein the nanoscale surface roughness is formed by ion-bombardment and plasma etching.

11. A process for reducing glare due to ambient light impinging upon a substrate surface by providing nanoscale surface roughness on the substrate surface.

12. The process as claimed in claim 11, wherein the nanoscale surface roughness is formed by ion-bombardment and plasma etching.