Oscillator for atomic force microscope and other applications

• US 20070062265A1
• Filed: 08/18/2006
• Published: 03/22/2007
• Est. Priority Date: 08/19/2005
• Status: Active Grant

• Current Assignee: Arthur Beyder, Frederick Sachs
• Original Assignee: Arthur Beyder, Frederick Sachs
• Inventors: Sachs, Frederick, Beyder, Arthur
• Granted Patent: US 7,533,561 B2
• Time in Patent Office: Days
• US Class Current: 73/105
• CPC Class Codes: B82Y 35/00 Methods or apparatus for measurement or analysis of nanostructures
• CPC Class Codes: G01Q 10/045 Self-actuating probes, i.e. wherein the actuating means for driving are part of the probe itself, e.g. piezoelectric means on a cantilever probe
• CPC Class Codes: G01Q 60/38 Probes, their manufacture, or their related instrumentation, e.g. holders
• CPC Class Codes: Y10T 29/49 Method of mechanical manufacture
• CPC Class Codes: Y10T 29/49007 Indicating transducer
• CPC Class Codes: Y10T 74/10 High frequency vibratory devices

Abstract

A device such as a sensor for use in an atomic force microscope. The device comprises a first oscillator, a second oscillator, a pair of first co-axial members interconnecting the first and second oscillators for torsionally suspending the first oscillator, a support structure, and a pair of second co-axial members whose axis is orthogonal to an axis of the first co-axial members and which interconnect the second oscillator and the support structure for torsionally suspending the second oscillator.

Claims

1. A device comprising a first oscillator, a second oscillator, a pair of first co-axial members interconnecting said first and second oscillators for torsionally suspending said first oscillator, a support structure, and a pair of second co-axial members whose axis is orthogonal to an axis of said first co-axial members and which interconnect said second oscillator and said support structure for torsionally suspending said second oscillator.

2. A device according to claim 1 wherein said first oscillator is a probe.

3. A device according to claim 2 wherein said probe includes a tip which is adapted for detecting a sample or surface and which is off-set from both of the axes.

4. A device according to claim 2 wherein said probe includes a tip which is adapted for detecting a sample or surface and which is on the axis of said first co-axial members and which is off-set from the axis of said second co-axial members.

5. A device according to claim 1 wherein said first and second oscillators are first and second probes respectively.

6. A device according to claim 5 wherein each of said probes includes a tip which is adapted for detecting a sample or surface, wherein said first probe tip is located on the axis of said second co-axial members and off-set from the axis of said first co-axial members, and wherein said second probe tip is located on the axis of said first co-axial members and off-set from the axis of said second co-axial members.

7. A device according to claim 5 wherein each of said probes includes a tip which is adapted for detecting a sample or surface, wherein said first probe tip is located at the intersection of the axes of said first and second co-axial members, and wherein said second probe tip is located on the axis of said first co-axial members and is off-set from the axis of said second co-axial members.

8. A device according to claim 1 wherein said first and second co-axial members are made of a material that is different from a material of which said first and second oscillators and said support structure are made.

9. A device according to claim 1 wherein said first and second co-axial members are portions of a layer of material applied to said first and second oscillators and said support structure.

10. A device according to claim 9 wherein said layer of material is silicon nitride and said first and second oscillators and said support structure are made of silicon.

11. A device according to claim 1 wherein said first and second co-axial members are made of silicon nitride and said first and second oscillators and said support structure are made of silicon.

12. A device according to claim 1 further comprising a detector of movement of said first oscillator.

13. A device according to claim 1 further comprising means for reflecting a signal off of said first oscillator, a detector of the reflected signal, and means for deriving first oscillator position information from the reflected signal.

14. A device according to claim 1 wherein the device is adapted for use in an atomic force microscope.

15. A sensor comprising a probe for detecting a surface, a first support structure, a pair of first co-axial members interconnecting said first support structure and said probe for torsionally suspending said probe, a reference probe on said first support structure, second support structure, and a pair of second co-axial members whose axis is orthogonal to an axis of said first co-axial members and which interconnect said first and second support structures for torsionally suspending said first support structure.

16. A device according to claim 15 wherein said first and second co-axial members are portions of a layer of material applied to said probe and said first and second support structures.

17. A device according to claim 15 wherein said first and second co-axial members are made of silicon nitride and said probe and said first and second support structures are made of silicon.

18. A device comprising an oscillator, first support structure, a pair of co-axial members interconnecting said first support structure and said oscillator for torsionally suspending said oscillator, second support structure, and at least one flexible hinge interconnecting said first and second support structures to flex said first support structure relative to said second support structure.

19. A device according to claim 18 wherein said flexible hinge and said co-axial members are portions of a layer of material applied to said oscillator and said first and second support structures.

20. A device according to claim 18 wherein said flexible hinge and said co-axial members are made of silicon nitride and said oscillator and said first and second support structures are made of silicon.