Combined sensor and its fabrication method

• US 20070062282A1
• Filed: 09/06/2006
• Published: 03/22/2007
• Est. Priority Date: 09/07/2005
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Okada, Ryoji, Akashi, Teruhisa, Suzuki, Kengo, Hayashi, Masahide
• Application Number:
  US11/516,927
• Publication Number:
  US 20070062282A1
• Time in Patent Office: Days
• US Class Current: 73/504.120
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/097 by vibratory elements
• CPC Class Codes: G01P 15/14 by making use of gyroscopes gyroscopes per se G01C19/00
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/082 for two degrees of freedom of movement of a single mass

Abstract

A sensor structure using vibrating sensor elements which can detect an angular rate and accelerations in two axes at the same time is provided. 2 sets of vibration units which vibrate in out-of-phase mode (tunning-fork vibration) and include four vibrating sensor elements of the approximately same shape supported on a substrate in a vibratile state are provided and the vibrating sensor elements are disposed so that vibration axes of the vibration units cross each other at right angles. Each of the vibrating sensor elements includes a pair of detection units and adjustment units for adjusting a vibration frequency. The vibrating sensor elements constitute a combined sensor having supporting structure for supporting the vibrating sensor elements independently so that the vibrating sensor elements do not interfere with each other.

Claims

1. A combined sensor for detecting accelerations applied to two axes in a horizontal plane of a substrate and an angular rate applied around an axis perpendicular to the two axes, comprising:

at least four vibrating sensor elements supported above the substrate in a vibratile state in the plane or out of the plane of the substrate;

each of the four vibrating sensor elements including;

at least two vibration units having vibration directions crossing each other; and

a pair of detection means disposed opposite to each other in a direction perpendicular to vibration direction of the vibrating sensor element;

each of the four vibrating sensor elements being supported in the substrate independently so that vibrations do not interfere with each other.

3. A combined sensor according to claim 1, comprising common vibration means for vibrating the vibrating sensor elements.

4. A combined sensor according to claim 1, wherein the vibrating sensor elements are disposed so that the vibration directions of the vibration units cross each other at right angles.

6. A combined sensor according to claim 1, wherein the vibrating sensor element is composed of silicon substrates piled up and between which glass is held and the silicon substrate supporting the vibrating sensor element is a {111}-oriented silicon substrate, the vibrating sensor element being supported in a vibratile state by forming groove in the oriented silicon substrate.

8. A combined sensor according to claim 1, wherein each of the four vibrating sensor elements includes adjustment means for adjusting a frequency of vibration and vibration detection means for detecting the frequency of vibration.

2. A combined sensor for detecting accelerations applied to two axes in a horizontal plane of a substrate and an angular rate applied around an axis perpendicular to the two axes, comprising:

at least four vibrating sensor elements supported above the substrate in a vibratile state in the plane or out of the plane of the substrate;

each of the four vibrating sensor elements including;

at least two vibration units having vibration directions crossing each other in the plane;

a pair of T-shaped detection beams extending in a vibration direction in the plane for detecting the angular rate and the accelerations and disposed opposite to each other in line symmetrically with an axis in the plane passing through the center of gravity of the vibrating sensor element and perpendicular to the vibration direction in the plane; and

a pair of vibration generation beams extending in a direction of the axis in the plane and disposed opposite to each other in line symmetrically with a vibration axis in the plane passing through the center of gravity of the vibrating sensor element and parallel to the vibration direction in the plane;

the detection beams including detection means;

the vibration generation beams including vibration generation means;

each of the four vibrating sensor elements including a plurality of connection beams extending in the vibration direction in the plane and in a direction in the plane perpendicular to the vibration direction and being independently supported to the substrate by the connection beams so that vibrations do not interfere with each other.

5. A combined sensor according to claim 2, wherein the vibrating sensor elements are disposed so that the vibration directions of the vibration units cross each other at right angles.

7. A combined sensor according to claim 2, wherein the vibrating sensor element is composed of silicon substrates piled up and between which glass is held and the silicon substrate supporting the vibrating sensor element is a {111}-oriented silicon substrate, the vibrating sensor element being supported in a vibratile state by forming groove in the oriented silicon substrate.

9. A combined sensor according to claim 2, wherein each of the four vibrating sensor elements includes adjustment means for adjusting a frequency of vibration and vibration detection means for detecting the frequency of vibration.

10. A method of fabricating a combined sensor including vibrating sensor elements supported independently so that vibrations do not interfere with each other, comprising:

a process of forming, on a silicon-on-insulator wafer, mask material for dry-etching of a silicon in the silicon-on-insulator wafer;

a process of dry-etching of the silicon using the mask material to form a trench groove;

a process of forming a thermal oxide layer of silicon on the surface of the silicon-on-insulator wafer;

a process of forming a polymer layer on the sidewall of the trench groove;

a process of etching thermal oxide layer at a bottom of the trench groove;

a process of forming a groove in the silicon substrate supporting the vibrating sensor element in the silicon-on-insulator wafer by dry-etching; and

a process of etching the silicon substrate supporting the vibrating sensor element by anisotropic etching of silicon to form groove under the vibrating sensor element.